首頁>NDB610B>規(guī)格書詳情

NDB610B中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

NDB610B
廠商型號

NDB610B

功能描述

N-Channel Enhancement Mode Field Effect Transistor

文件大小

73.91 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-23 13:30:00

NDB610B規(guī)格書詳情

General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

■ 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω.

■ Critical DC electrical parameters specified at elevated temperature.

■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

■ 175°C maximum junction temperature rating.

■ High density cell design (3 million/in2) for extremely low RDS(ON).

■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
ST
2022+
SOP8
6000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
NS
23+
原裝正品現(xiàn)貨
10000
TO-263
詢價
NS
2023+
3000
進(jìn)口原裝現(xiàn)貨
詢價
NS
23+
TO-263
800
全新原裝正品現(xiàn)貨,支持訂貨
詢價
NS/國半
23+
NA/
4050
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
詢價
NS
23+
TO-263
6000
原裝正品,支持實(shí)單
詢價
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
NS/國半
1948+
TO263
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
NS
22+
TO263
6550
絕對原裝公司現(xiàn)貨!
詢價
NS/國半
23+
TO263
25600
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價