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NE202

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE20248

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE20283A

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE202930

Silicon NPN Epitaxial High Frequency Transistor

FEATURES ?HightransitionfrequencyfT=11GHzTYP. ?Idealforlownoiseandlowdistortionamplification ?Suitableforequipmentsoflowcollectorvoltage(Lessthan5V) ?Suitableforupto1GHzapplications ??????? APPLICATIONS ?LNA(LowNoiseAmplifier)orpowersplitterfordigi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE202930

Silicon NPN Epitaxial High Frequency Transistor

FEATURES ?HightransitionfrequencyfT=11GHzTYP. ?Idealforlownoiseandlowdistortionamplification ?Suitableforequipmentsoflowcollectorvoltage(Lessthan5V) ?Suitableforupto1GHzapplications ??????? APPLICATIONS ?LNA(LowNoiseAmplifier)orpowersplitterfordigi

CEL

California Eastern Labs

NE202930-T1

Silicon NPN Epitaxial High Frequency Transistor

FEATURES ?HightransitionfrequencyfT=11GHzTYP. ?Idealforlownoiseandlowdistortionamplification ?Suitableforequipmentsoflowcollectorvoltage(Lessthan5V) ?Suitableforupto1GHzapplications ??????? APPLICATIONS ?LNA(LowNoiseAmplifier)orpowersplitterfordigi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE202930-T1

Silicon NPN Epitaxial High Frequency Transistor

FEATURES ?HightransitionfrequencyfT=11GHzTYP. ?Idealforlownoiseandlowdistortionamplification ?Suitableforequipmentsoflowcollectorvoltage(Lessthan5V) ?Suitableforupto1GHzapplications ??????? APPLICATIONS ?LNA(LowNoiseAmplifier)orpowersplitterfordigi

CEL

California Eastern Labs

NE202930-T1-A

Silicon NPN Epitaxial High Frequency Transistor

FEATURES ?HightransitionfrequencyfT=11GHzTYP. ?Idealforlownoiseandlowdistortionamplification ?Suitableforequipmentsoflowcollectorvoltage(Lessthan5V) ?Suitableforupto1GHzapplications ??????? APPLICATIONS ?LNA(LowNoiseAmplifier)orpowersplitterfordigi

CEL

California Eastern Labs

NE202XX

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE202XX-1.4

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號：

    NE202

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    ULTRA LOW NOISE K BAND HETERO JUNCTION FET

供應(yīng)商型號品牌批號封裝庫存備注價格
GPS
6000
面議
19
SOP
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進口原裝
23+
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1312
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24+
SOT-323
5000
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GPS
20+
SOP16
2960
誠信交易大量庫存現(xiàn)貨
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23+
SOT-323
50000
全新原裝正品現(xiàn)貨,支持訂貨
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RENESAS/瑞薩
21+
SOT-323
10000
原裝現(xiàn)貨假一罰十
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RENESAS/瑞薩
2022
SOT-323
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
RENESAS/瑞薩
21+
SOT323
13880
公司只售原裝,支持實單
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RENESAS/瑞薩
21+
SOT323
19600
一站式BOM配單
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California Eastern Labs
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
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更多NE202供應(yīng)商 更新時間2025-3-5 17:06:00

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