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NE32484A

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE32484A

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE32484A

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE32484A_98

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE32484AS

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE32484A-SL

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE32484A-SL

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE32484A-T1

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE32484A-T1

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE32484A-T1

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE32484A-T1A

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE32484A-T1A

Marking:T;HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    NE32484A

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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NEC
1742+
SMT36
98215
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品!
詢價(jià)
NEC
24+
SMT84
246
現(xiàn)貨供應(yīng)
詢價(jià)
NEC
23+
TO-59
8510
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
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NEC
20+
SMT36
4
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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ROHM
2022+
SOP8
6000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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NEC
SMT36
899933
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
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NEC
589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
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NEC
22+
SMT36
25000
只有原裝原裝,支持BOM配單
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NEC
2023+
SMT36
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
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NEC
23+
SMT36
4
全新原裝正品現(xiàn)貨,支持訂貨
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更多NE32484A供應(yīng)商 更新時(shí)間2025-1-18 15:44:00