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NE325S01

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE325S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE325S01

C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE325S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.Itsexcellentlownoisefigureandhighassociatedgainmakeitsuitableforcommercialsystemsandindustrialapplications. NECsstringent

CEL

California Eastern Labs

NE325S01

C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE325S01-T1

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE325S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE325S01-T1

C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE325S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.Itsexcellentlownoisefigureandhighassociatedgainmakeitsuitableforcommercialsystemsandindustrialapplications. NECsstringent

CEL

California Eastern Labs

NE325S01-T1B

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE325S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE325S01-T1B

C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE325S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.Itsexcellentlownoisefigureandhighassociatedgainmakeitsuitableforcommercialsystemsandindustrialapplications. NECsstringent

CEL

California Eastern Labs

NE325S01_02

C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE325S01-T1

C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE325S01-T1B

C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    NE325S01

  • 功能描述：

    射頻GaAs晶體管 Super Lo Noise HJFET

  • RoHS：

    否

  • 制造商：

    TriQuint Semiconductor

  • 技術(shù)類型：

    pHEMT

  • 頻率：

    500 MHz to 3 GHz

  • 增益：

    10 dB

  • 噪聲系數(shù)：

    正向跨導(dǎo)

  • gFS（最大值/最小值）：

    4 S 漏源電壓

  • 閘/源擊穿電壓：

    - 8 V

  • 漏極連續(xù)電流：

    3 A

  • 最大工作溫度：

    + 150 C

  • 功率耗散：

    10 W

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更多NE325S01供應(yīng)商 更新時(shí)間2025-4-25 15:30:00

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