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NE34018

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION NE34018isan-channelHJ-FEThousedinMOLDpackage. FEATURES ?Lownoisefigure NF=0.6dBTYP.atf=2GHz ?Highassociatedgain Ga=16dBTYP.atf=2GHz ?Gatewidth:Wg=400μm ?4pinssuperminimold ?Tape&reelpackagingonlyavailable

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE34018

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

DESCRIPTION NECsNE34018isalowcostgalliumarsenideHetero-JunctionFEThousedinaminiature(SOT-343)plasticsurfacemountpackage.ThedeviceisfabricatedusingionimplantationforimprovedRFandDCperformance,reliability,anduniformity.Itslownoisefigure,highgain,smallsizea

CEL

California Eastern Labs

NE34018

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES ?Lownoisefigure:NF=0.6dBTYP.@f=2GHz ?Highassociatedgain:Ga=16dBTYP.@f=2GHz ?Gatewidth:Wg=400mm ?4-pinsuperminimoldpackage ?Tape&reelpackagingonlyavailable

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE34018-A

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

DESCRIPTION NECsNE34018isalowcostgalliumarsenideHetero-JunctionFEThousedinaminiature(SOT-343)plasticsurfacemountpackage.ThedeviceisfabricatedusingionimplantationforimprovedRFandDCperformance,reliability,anduniformity.Itslownoisefigure,highgain,smallsizea

CEL

California Eastern Labs

NE34018-T1

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION NE34018isan-channelHJ-FEThousedinMOLDpackage. FEATURES ?Lownoisefigure NF=0.6dBTYP.atf=2GHz ?Highassociatedgain Ga=16dBTYP.atf=2GHz ?Gatewidth:Wg=400μm ?4pinssuperminimold ?Tape&reelpackagingonlyavailable

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE34018-T1

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES ?Lownoisefigure:NF=0.6dBTYP.@f=2GHz ?Highassociatedgain:Ga=16dBTYP.@f=2GHz ?Gatewidth:Wg=400mm ?4-pinsuperminimoldpackage ?Tape&reelpackagingonlyavailable

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE34018-T2

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION NE34018isan-channelHJ-FEThousedinMOLDpackage. FEATURES ?Lownoisefigure NF=0.6dBTYP.atf=2GHz ?Highassociatedgain Ga=16dBTYP.atf=2GHz ?Gatewidth:Wg=400μm ?4pinssuperminimold ?Tape&reelpackagingonlyavailable

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE34018-T2

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES ?Lownoisefigure:NF=0.6dBTYP.@f=2GHz ?Highassociatedgain:Ga=16dBTYP.@f=2GHz ?Gatewidth:Wg=400mm ?4-pinsuperminimoldpackage ?Tape&reelpackagingonlyavailable

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE34018-TI-63-A

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

DESCRIPTION NECsNE34018isalowcostgalliumarsenideHetero-JunctionFEThousedinaminiature(SOT-343)plasticsurfacemountpackage.ThedeviceisfabricatedusingionimplantationforimprovedRFandDCperformance,reliability,anduniformity.Itslownoisefigure,highgain,smallsizea

CEL

California Eastern Labs

NE34018-TI-64-A

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

DESCRIPTION NECsNE34018isalowcostgalliumarsenideHetero-JunctionFEThousedinaminiature(SOT-343)plasticsurfacemountpackage.ThedeviceisfabricatedusingionimplantationforimprovedRFandDCperformance,reliability,anduniformity.Itslownoisefigure,highgain,smallsizea

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號：

    NE34018

  • 功能描述：

    MOSFET L-S Band Lo No Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
3000
公司存貨
 詢價
NEC
23+
SOT343
7780
全新原裝優(yōu)勢
 詢價
NEC
25+23+
SOT343
41588
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價
NEC
6000
面議
19
SOT343
 詢價
NEC
2013
SOT
50000
全新
 詢價
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費送樣
 詢價
NEC
21+
SOT343
10000
原裝現(xiàn)貨假一罰十
 詢價
NEC
24+
SOT343
598000
原裝現(xiàn)貨假一賠十
 詢價
NEC
22+
SOT343
3000
原裝正品,支持實單
 詢價
NEC
2008
SOT343-4
890
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多NE34018供應(yīng)商 更新時間2025-4-26 10:20:00

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