NE5520379A分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

NE5520379A屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由California Eastern Labs制造生產(chǎn)的NE5520379A晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場(chǎng)控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類(lèi)型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

DESCRIPTION

NECs NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NECs NEWMOS technology (NECs 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function.

FEATURES

? LOW COST PLASTIC SURFACE MOUNT PACKAGE

? HIGH OUTPUT POWER: +35.5 dBm TYP

? HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz

? HIGH POWER ADDED EFFICIENCY: 65 TYP @ VDS = 3.2 V, f = 915 MHz

? SINGLE SUPPLY: 2.8 to 6.0 V

? CLASS AB OPERATION

? SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX

APPLICATIONS

? DIGITAL CELLULAR PHONES: 3.2 V GSM900/DCS 1800 Dual Band Handsets

? OTHERS:

Two-Way Pagers

Retail Business Radio

Special Mobile Radio

Short Range Wireless