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NE5520379A

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION NECsNE5520379AisanN-ChannelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifierfor3.2VGSM900handsets.DiearemanufacturedusingNECsNEWMOStechnology(NECs0.6μmWSigatelateralMOSFET)andhousedinasurfacemountpackage.Thisdevicecandeliver

CEL

California Eastern Labs

NE5520379A

SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FORGSM/DCSDUAL-BANDPHONETRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520379AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for3.2VGSM900handsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520379A-T1

SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FORGSM/DCSDUAL-BANDPHONETRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520379AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for3.2VGSM900handsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520379A-T1A

SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FORGSM/DCSDUAL-BANDPHONETRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520379AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for3.2VGSM900handsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520379A-T1A-A

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION NECsNE5520379AisanN-ChannelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifierfor3.2VGSM900handsets.DiearemanufacturedusingNECsNEWMOStechnology(NECs0.6μmWSigatelateralMOSFET)andhousedinasurfacemountpackage.Thisdevicecandeliver

CEL

California Eastern Labs

NE5520379A-EVPW04-A

包裝:盒 類別:開發(fā)板,套件,編程器 射頻評(píng)估和開發(fā)套件,開發(fā)板 描述:EVAL BOARD NE5520379A

CEL

California Eastern Labs

NE5520379A-T1A-A

包裝:托盤 封裝/外殼:4-SMD,扁平引線 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 描述:FET RF 15V 915MHZ 79A-PKG

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號(hào):

    NE5520379A

  • 功能描述:

    射頻MOSFET電源晶體管 L&S Band LD-MOSFET

  • RoHS:

  • 制造商:

    Freescale Semiconductor

  • 配置:

    Single

  • 頻率:

    1800 MHz to 2000 MHz

  • 增益:

    27 dB

  • 輸出功率:

    100 W

  • 封裝/箱體:

    NI-780-4

  • 封裝:

    Tray

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
3000
公司存貨
詢價(jià)
NEC
23+
79A
10000
全新原裝
詢價(jià)
NEC
2020+
SMD
5000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
NEC
6000
面議
19
DIP/SMD
詢價(jià)
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢價(jià)
NEC
2023+
3
詢價(jià)
NEC
21+
SMD
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
NEC
22+
SMD
3000
原裝正品,支持實(shí)單
詢價(jià)
NEC/RENESAS瑞薩
23+
SOP-8
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
詢價(jià)
NEC
23+
NA/
6050
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
更多NE5520379A供應(yīng)商 更新時(shí)間2024-12-24 10:20:00