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NE64320

NPN MEDIUM POWER MICROWAVE TRANSISTOR

FEATURES ●HIGHOUTPUTPOWER:900mWat2GHz ●HIGHGAIN:11dBat1GHz ●RELIABILITY:Platinum-GoldMetallization

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE645

Dolby Noise Reduction Circuit

DESCRIPTION TheNE645/646isamonolithicaudionoisereductioncircuitdesignedasdirectreplacementdevicefortheNE645B/NE646BinDolby*B-Typenoisereductionsystems.

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

NE64535

NPN SILICON LOW NOISE RF TRANSISTOR

DESCRIPTION: TheASINE64535isaCommonEmitterDeviceDesignedforLowNoiseClassAAmplifierApplicationsupto4.0GHz. FEATURESINCLUDE: ?NF=1.6dBTypical@2GHz ?|S21E|2=11dBTypical@2GHz ?HermeticCeramicPackage

ASI

Advanced Semiconductor

NE645N

Dolby Noise Reduction Circuit

DESCRIPTION TheNE645/646isamonolithicaudionoisereductioncircuitdesignedasdirectreplacementdevicefortheNE645B/NE646BinDolby*B-Typenoisereductionsystems.

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

NE646

Dolby Noise Reduction Circuit

DESCRIPTION TheNE645/646isamonolithicaudionoisereductioncircuitdesignedasdirectreplacementdevicefortheNE645B/NE646BinDolby*B-Typenoisereductionsystems.

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

NE646N

Dolby Noise Reduction Circuit

DESCRIPTION TheNE645/646isamonolithicaudionoisereductioncircuitdesignedasdirectreplacementdevicefortheNE645B/NE646BinDolby*B-Typenoisereductionsystems.

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

NE6500179A

N-CHANNEL GaAs MES FET

1WL-BANDPOWERGaAsMESFET DESCRIPTION TheNE6500179Aisa1WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobile communicationhandsetandbasestationsystems.Itiscapableofdelivering1Wofoutputpower(CW)withhigh lineargain,highefficiencyandexcelle

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE6500179A-T1

N-CHANNEL GaAs MES FET

1WL-BANDPOWERGaAsMESFET DESCRIPTION TheNE6500179Aisa1WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobile communicationhandsetandbasestationsystems.Itiscapableofdelivering1Wofoutputpower(CW)withhigh lineargain,highefficiencyandexcelle

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE6500278

GaAs MES FET

2.0WL-BAND,S-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNE6500278isapowerGaAsFETwhichprovideshighgain,highefficiencyandhighoutputpowerinLbandand Sband. FEATURES ?ClassABoperation ?Highoutputpower:35.5dBm(TYP.) ?HighLinearGain:9.0dB(TY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE6500278-E3

GaAs MES FET

2.0WL-BAND,S-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNE6500278isapowerGaAsFETwhichprovideshighgain,highefficiencyandhighoutputpowerinLbandand Sband. FEATURES ?ClassABoperation ?Highoutputpower:35.5dBm(TYP.) ?HighLinearGain:9.0dB(TY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    NE6

  • 制造商:

    Essentra Components

  • 類別:

    電纜,電線 - 管理 > 電纜支撐與緊固件

  • 系列:

    Richco

  • 包裝:

    散裝

  • 類型:

    線夾,P 型

  • 開口尺寸:

    0.375"(9.53mm)

  • 安裝類型:

    緊固件

  • 材料:

  • 顏色:

    黑色,銀色

  • 寬度:

    0.375"(9.53mm)

  • 面板孔尺寸:

    0.204"(5.18mm)

  • 材料厚度:

    0.031"(0.80mm)

  • 特性:

    保護(hù)涂層

  • 描述:

    CBL CLAMP P-TYPE FASTENER

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Richco
2022+
961
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Essentra
22+
NA
729
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NE
36118
SOT23-3
2015
專業(yè)代理LDO穩(wěn)壓IC,型號(hào)齊全,公司優(yōu)勢(shì)產(chǎn)品
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PHI
DIP8
87+
40
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詢價(jià)
NXP
10+
DIP16
7800
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PHILIPS
04+
2000
詢價(jià)
PHILIPS
23+
SO-20
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
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PHILIPS
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SSOP20
1111
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PHI
00+
SOP8
80
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PHILIPS
23+
SOP
12300
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更多NE6供應(yīng)商 更新時(shí)間2025-4-5 9:50:00