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NE651R479A-T1-A

MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECsNE651R479AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering0.5Wattsofoutputpower(CW)at3.5V,and1Wattofoutputpower(CW)at5

CEL

California Eastern Labs

NE661M04

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES ?Lownoiseandhighgainwithlowcollectorcurrent ?NF=1.2dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=2mA ?Maximumstablepowergain:MSG=22dBTYP.@f=2GHz,VCE=2V,IC=5mA ?fT=25GHztechnology ?Flat-lead4-pinthinsupermini-mold(t=0.59mm)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE661M04

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECsNE661M04isfabricatedusingNECsUHS025GHzfTwaferprocess.Withatypicaltransitionfrequencyof25GHztheNE661M04isusableinapplicationsfrom100MHzto10GHz.TheNE661M04providesexcellentlowvoltage/lowcurrentperformance. NECsnewlowprofile/flatleadstyle

CEL

California Eastern Labs

NE661M04-T2

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES ?Lownoiseandhighgainwithlowcollectorcurrent ?NF=1.2dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=2mA ?Maximumstablepowergain:MSG=22dBTYP.@f=2GHz,VCE=2V,IC=5mA ?fT=25GHztechnology ?Flat-lead4-pinthinsupermini-mold(t=0.59mm)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE661M04-T2-A

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECsNE661M04isfabricatedusingNECsUHS025GHzfTwaferprocess.Withatypicaltransitionfrequencyof25GHztheNE661M04isusableinapplicationsfrom100MHzto10GHz.TheNE661M04providesexcellentlowvoltage/lowcurrentperformance. NECsnewlowprofile/flatleadstyle

CEL

California Eastern Labs

NE661M04-T2-A

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECsNE661M04isfabricatedusingNECsUHS025GHzfTwaferprocess.Withatypicaltransitionfrequencyof25GHztheNE661M04isusableinapplicationsfrom100MHzto10GHz.TheNE661M04providesexcellentlowvoltage/lowcurrentperformance. NECsnewlowprofile/flatleadstyle

CEL

California Eastern Labs

NE661M05

NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR LOWCURRENT,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE661M05-T1

NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR LOWCURRENT,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE661M4

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECsNE661M04isfabricatedusingNECsUHS025GHzfTwaferprocess.Withatypicaltransitionfrequencyof25GHztheNE661M04isusableinapplicationsfrom100MHzto10GHz.TheNE661M04providesexcellentlowvoltage/lowcurrentperformance. NECsnewlowprofile/flatleadstyle

CEL

California Eastern Labs

NE66219

NPN SILICON RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES ?Suitableforhigh-frequencyoscillation ?fT=25GHztechnologyadopted ?3-pinultrasuperminimold(19,1608PKG)package

CEL

California Eastern Labs

替換型號

產(chǎn)品屬性

  • 產(chǎn)品編號：

    NE6

  • 制造商：

    Essentra Components

  • 類別：

    電纜，電線 - 管理 > 電纜支撐與緊固件

  • 系列：

    Richco

  • 包裝：

    散裝

  • 類型：

    線夾，P 型

  • 開口尺寸：

    0.375"（9.53mm）

  • 安裝類型：

    緊固件

  • 材料：

    鋁

  • 顏色：

    黑色，銀色

  • 寬度：

    0.375"（9.53mm）

  • 面板孔尺寸：

    0.204"（5.18mm）

  • 材料厚度：

    0.031"（0.80mm）

  • 特性：

    保護(hù)涂層

  • 描述：

    CBL CLAMP P-TYPE FASTENER

供應(yīng)商型號品牌批號封裝庫存備注價格
Richco
2022+
961
全新原裝 貨期兩周
 詢價
Essentra
22+
NA
729
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
NE
36118
SOT23-3
2015
專業(yè)代理LDO穩(wěn)壓IC,型號齊全,公司優(yōu)勢產(chǎn)品
 詢價
PHI
DIP8
87+
40
全新原裝進(jìn)口自己庫存優(yōu)勢
 詢價
NXP
10+
DIP16
7800
全新原裝正品,現(xiàn)貨銷售
 詢價
PHILIPS
04+
2000
詢價
PHILIPS
23+
SO-20
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
 詢價
PHILIPS
25+
SSOP20
1111
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
 詢價
PHI
00+
SOP8
80
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
 詢價
PHILIPS
23+
SOP
12300
詢價
更多NE6供應(yīng)商 更新時間2025-4-7 9:50:00

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