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NE6510379A-T1中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

NE6510379A-T1
廠商型號

NE6510379A-T1

功能描述

3 W L-BAND POWER GaAs HJ-FET

文件大小

97.46 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Renesas Electronics America
企業(yè)簡稱

NEC瑞薩

中文名稱

日本瑞薩電子株式會社官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-5-8 18:16:00

人工找貨

NE6510379A-T1價格和庫存,歡迎聯(lián)系客服免費人工找貨

NE6510379A-T1規(guī)格書詳情

DESCRIPTION

The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

? GaAs HJ-FET Structure

? High Output Power :

PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty

PO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty

? High Linear Gain :

GL = 13 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty

GL = 8 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty

? High Power Added Efficiency:

58 typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty

52 typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty

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