首頁 >NES>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

NESG204619-T1-A

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FEATURES ?IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,F=2GHZ ?HIGHBREAKDOWNVOLTAGETECHNOLOGYFORSIGETRANSISTORS: VCEO(ABSOLUTEMAXIMUMRATINGS)=5.0V ?3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG204619-T1-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES ?IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V ?3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2046M33

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33

NPN SILICON SiGe RF TWIN TRANSISTOR

NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD(M16,1208PACKAGE) FEATURES ?2differentbuilt-intransistors(NESG2046M33,2SC5800) Q1:HighgainSiGetransistor fT=18GHzTYP.,?S21e?2=13dBTYP.@VCE=1V,IC=15mA,f=2GHz Q2:Low

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33-A

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES ?IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V ?3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2046M33-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33-T3

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33-T3-A

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES ?IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V ?3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2046M33-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

產品屬性

  • 產品編號：

    NES

  • 制造商：

    Altech Corporation

  • 類別：

    電路保護 > 配件

  • 包裝：

    散裝

  • 描述：

    BUSBAR SUPP W FIXING SCREW(50

供應商型號品牌批號封裝庫存備注價格
NECT1K原裝
SOT-343
3000
原裝長期供貨!
 詢價
PHILLIPS
24+
SMD
7500
絕對原裝自家現貨!真實庫存!歡迎來電!
 詢價
NEC
25+
SM
1200
原裝現貨熱賣中,提供一站式真芯服務
 詢價
NEC
17+
SOT-343
6200
100%原裝正品現貨
 詢價
NEC
23+
原廠封裝
9896
詢價
RENESAS
12+
SOT343
3000
詢價
NEC
24+
SOT343
6980
原裝現貨,可開13%稅票
 詢價
MW
23+
模塊
1000
原裝正品,假一罰十
 詢價
NECELECTRON
24+
原封裝
18514
原裝現貨假一罰十
 詢價
NICHIA
13+
32325
原裝分銷
 詢價
更多NES供應商 更新時間2025-4-10 10:20:00

相關規(guī)格書

更多

相關庫存

更多