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NESG2046M33

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33

NPN SILICON SiGe RF TWIN TRANSISTOR

NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD(M16,1208PACKAGE) FEATURES ?2differentbuilt-intransistors(NESG2046M33,2SC5800) Q1:HighgainSiGetransistor fT=18GHzTYP.,?S21e?2=13dBTYP.@VCE=1V,IC=15mA,f=2GHz Q2:Low

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES ?IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V ?3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2046M33

NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

CEL

California Eastern Labs

NESG2046M33-A

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES ?IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V ?3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2046M33-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33-T3

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33-T3-A

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES ?IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V ?3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2046M33-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33-A

NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

CEL

California Eastern Labs

NESG2046M33-T3-A

NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號(hào)：

    NESG2046M33

  • 制造商：

    CEL

  • 制造商全稱(chēng)：

    CEL

  • 功能描述：

    NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢(xún)價(jià)
CEL
2022+
3 針 SuperMiniMold(M33)
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
 詢(xún)價(jià)
RENESAS/瑞薩
23+
SOT-23
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢(xún)價(jià)
CEL
24+
3-SMD 扁平引線
9350
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢(xún)價(jià)
NEC
17+
SOT343
6200
100%原裝正品現(xiàn)貨
 詢(xún)價(jià)
NEC
24+
SOT-343SOT-323-4
87200
新進(jìn)庫(kù)存/原裝
 詢(xún)價(jià)
NEC
23+
SOT343
6680
全新原裝優(yōu)勢(shì)
 詢(xún)價(jià)
NEC
16+
SOT343
10000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
 詢(xún)價(jià)
RENESAS
19+
SOT343
87069
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢(xún)價(jià)
NEC
2020+
SOT343
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢(xún)價(jià)
更多NESG2046M33供應(yīng)商 更新時(shí)間2025-1-5 15:00:00

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