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NESG210719

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FEATURES ?IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS ?HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR ?3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG210719

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES ?TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification ?HighbreakdownvoltagetechnologyforSiGeTr. ?3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG210719

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)

CEL

California Eastern Labs

NESG210719-A

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES ?TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification ?HighbreakdownvoltagetechnologyforSiGeTr. ?3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG210719-T1

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FEATURES ?IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS ?HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR ?3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG210719-T1

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES ?TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification ?HighbreakdownvoltagetechnologyforSiGeTr. ?3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG210719-T1-A

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES ?TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification ?HighbreakdownvoltagetechnologyforSiGeTr. ?3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG210719-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)

CEL

California Eastern Labs

NESG210719-T1

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)

CEL

California Eastern Labs

NESG210719-T1-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)

CEL

California Eastern Labs

詳細參數(shù)

  • 型號：

    NESG210719

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

供應商型號品牌批號封裝庫存備注價格
RENESAS
23+
SC-90
63000
原裝正品現(xiàn)貨
 詢價
NEC
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
21+
SOT-23
10000
原裝現(xiàn)貨假一罰十
 詢價
NEC
2022
SOT-23
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
RENESAS/瑞薩
23+
SOT-523
27000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
RENESAS/瑞薩
SOT-523
90000
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
NEC
23+
NA/
6250
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
RENESAS/瑞薩
23+
SOT-523
54258
全新原廠原裝正品現(xiàn)貨,可提供技術支持、樣品免費!
 詢價
CEL
24+
原廠原裝
5000
原裝正品
 詢價
CEL
19+
SOT-523
200000
詢價
更多NESG210719供應商 更新時間2025-1-4 14:30:00

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