2N7002AK

Marking：NJ；Package：SOT-23；N-Channel Enhancement MOSFET

HighSpeedSwitchingApplications ESDprotectedgate LowON-resistance RDS(on)=2.8Ω(typ.)(@VGS=10V) RDS(on)=3.1Ω(typ.)(@VGS=5V) RDS(on)=3.2Ω(typ.)(@VGS=4.5V)

2SCR564F3

Marking：NJ；Package：DFN2020-3S；NPN 4A 80V Middle Power Transistor

Features 1)SuitableforMiddlePowerDriver. 2)LowVCE(sat) VCE(sat)=300mV(Max.). (IC/IB=2A/100mA) 3)Highcollectorcurrent. IC=4A(max),ICP=8A(max) 4)LeadlesssmallSMDpackage(HUML2020L3) Excellentthermalandelectricalconductivity. Application LOWFREQUENCYAMPLIF

T2N7002AK

Marking：NJ；Package：SOT23；High Speed Switching Applications

○HighSpeedSwitchingApplications ?ESDprotectedgate ?LowON-resistanceRDS(on)=2.8Ω(typ.)(@VGS=10V) RDS(on)=3.1Ω(typ.)(@VGS=5V) RDS(on)=3.2Ω(typ.)(@VGS=4.5V)

TCAL9538DTUR

Marking：NJ；Package：X2QFN；TCAL9538 8-Bit I2C-Bus, SMBus I/O Expander With Interrupt Output, Reset, and Agile I/O Configuration Registers

1Features ?Operatingpower-supplyvoltagerangeof1.08Vto 3.6V ?Lowstandbycurrentconsumptionof1μAtypical at1.8V ?1-MHzfastmodeplusI2Cbus ?Hardwareaddresspinallowstwodevicesonthe sameI2C,SMBusbus ?Active-lowresetinput(RESET) ?Open-drainactive-lowint

EFC2J022NUZ

Marking：NJ；Package：WLCSP10；Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 3.55 m廓, 18 A, Dual N-Channel

EFC2J022NUZTCG

Marking：NJ；Package：WLCSP10；Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 3.55 m廓, 18 A, Dual N-Channel

RP130Q381D

Marking：NJ；Package：SOT-343R；LOW NOISE 150mA LDO REGULATOR

SSM3K7002CFU

Marking：NJ；Package：USM；MOSFETs Silicon N-Channel MOS

SSM6N7002CFU

Marking：NJ；Package：US6；High-Speed Switching

TLV70015DSER

Marking：NJ；Package：WSON-61,5x1,5；200-mA, Low-IQ, Low-Dropout Regulator for Portable Devices