NS4160

ClassAB/ClassDswitching,ultra-lowEMI,nofilterrequired,5Wmonoaudioamplifier

?ClassAB/ClassDworkingmodeswitchingfunction ?ClassAB/ClassDworkingmodeandlow-powershutdownmodearecontrolledbyone-linepulse,savingthemaincontrolGPIO ?5Woutputpower ?0.1THD(1Woutputpower,5Vpowersupply) ?Excellentfull-bandwidthEMIsuppressioncapability ?E

NSL-4160

TO-18PhotocellsHermeticPackage

NTJS4160N

HighEfficiencyDC-DCConverters

NTJS4160N

PowerMOSFET30V,3.2A,SingleN-Channel,SC-88

LowProfile,SmallFootprintPackaging ONSemiconductoroffersthelatestinlow-profile,small-outlinepackaging.Weenablethedesignandproductionofultra-thinend-userproductsfortheconsumermarket,bymanufacturingsomeofthelowestprofilepackagingavailableintheworld,invastvol

PBSS4160DPN

60V,1ANPN/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS4160DPN

60V,1ANPN/PNPlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsat(BISS)transistorpairinaSOT457(SC-74)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,reducesheatgeneration ■Reducesprinted-circuitboardarearequire

PBSS4160DS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS4160DS

60V1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorpairinaSOT457(SC-74)SurfaceMountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5160DS. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM

PBSS4160PAN

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. Featuresandbenefits ?Verylowcollector-emitt

PBSS4160PAN

60V,1ANPN/NPNlowVCEsat(BISS)transistor

1.Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits ?Verylowcollec

PBSS4160PANP

60V,1ANPN/PNPlowVCEsat(BISS)transistor

1.Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpower DFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits ?Verylowcollect

PBSS4160PANP

60V,1ANPN/PNPlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. Featuresandbenefits ?Verylowcollector-emitte

PBSS4160PANPS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020D-6(SOT1118D)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. NPN/NPNcomplement:PBSS4160PANS.PNP/PNPcomplement:PBSS5160PAPS. Features

PBSS4160PANS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

PBSS4160QA

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. PNPcomplement:PBSS5160QA. 2.Featuresandbenefits ?Verylowcollector-

PBSS4160QA

60V,1ANPNlowVCEsat(BISS)transistor

PBSS4160QA-Q

60V,1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-Mounted Device(SMD)plasticpackagewithvisibleandsolderablesidepads. 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapabi

PBSS4160T

60V,1ANPNlowVCEsat(BISS)transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage. PNPcomplement:PBSS5160T. FEATURES ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiency,reducesheatgeneration ?Reducesprinted-circuitboardarearequired ?

PBSS4160T

LowVCEsat(BISS)transistors

PBSS4160T

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.