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首頁 >NTJS4160N>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
NTJS4160N	文件：87.32 Kbytes Page：5 Pages	Power MOSFET 30 V, 3.2 A, Single N-Channel, SC-88 LowProfile,SmallFootprintPackaging ONSemiconductoroffersthelatestinlow-profile,small-outlinepackaging.Weenablethedesignandproductionofultra-thinend-userproductsfortheconsumermarket,bymanufacturingsomeofthelowestprofilepackagingavailableintheworld,invastvol	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTJS4160N	文件：1.9268 Mbytes Page：20 Pages	High Efficiency DC-DC Converters	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTJS4160NT1G	文件：87.32 Kbytes Page：5 Pages	Power MOSFET 30 V, 3.2 A, Single N-Channel, SC-88 LowProfile,SmallFootprintPackaging ONSemiconductoroffersthelatestinlow-profile,small-outlinepackaging.Weenablethedesignandproductionofultra-thinend-userproductsfortheconsumermarket,bymanufacturingsomeofthelowestprofilepackagingavailableintheworld,invastvol	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
PBSS4160DPN	文件：120.13 Kbytes Page：14 Pages	60V,1ANPN/PNPlowVCEsat(BISS)transistor Generaldescription NPN/PNPlowVCEsat(BISS)transistorpairinaSOT457(SC-74)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,reducesheatgeneration ■Reducesprinted-circuitboardarearequire	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PBSS4160DPN	文件：380.69 Kbytes Page：19 Pages	60V,1ANPN/PNPlowVCEsat(BISS)transistor Features Lowcollector-emittersaturationvoltageVCEsat Highcollectorcurrentcapability:ICandICM Highcollectorcurrentgain(hFE)athighIC Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS4160DS	文件：329.95 Kbytes Page：15 Pages	60V,1ANPN/NPNlowVCEsat(BISS)transistor Features Lowcollector-emittersaturationvoltageVCEsat Highcollectorcurrentcapability:ICandICM Highcollectorcurrentgain(hFE)athighIC Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS4160DS	文件：154.36 Kbytes Page：14 Pages	60V1ANPN/NPNlowVCEsat(BISS)transistor Generaldescription NPN/NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorpairinaSOT457(SC-74)SurfaceMountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5160DS. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PBSS4160PAN	文件：276.45 Kbytes Page：17 Pages	60V,1ANPN/NPNlowVCEsat(BISS)transistor Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. Featuresandbenefits ?Verylowcollector-emitt	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
PBSS4160PAN	文件：752.37 Kbytes Page：17 Pages	60V,1ANPN/NPNlowVCEsat(BISS)transistor 1.Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits ?Verylowcollec	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS4160PANP	文件：337.41 Kbytes Page：21 Pages	60V,1ANPN/PNPlowVCEsat(BISS)transistor 1.Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpower DFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits ?Verylowcollect	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS4160PANP	文件：368.23 Kbytes Page：21 Pages	60V,1ANPN/PNPlowVCEsat(BISS)transistor Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. Featuresandbenefits ?Verylowcollector-emitte	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
PBSS4160PANPS	文件：804.95 Kbytes Page：23 Pages	60V,1ANPN/NPNlowVCEsat(BISS)transistor Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020D-6(SOT1118D)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. NPN/NPNcomplement:PBSS4160PANS.PNP/PNPcomplement:PBSS5160PAPS. Features	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS4160PANS	文件：762.59 Kbytes Page：19 Pages	60V,1ANPN/NPNlowVCEsat(BISS)transistor	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS4160QA	文件：744.15 Kbytes Page：17 Pages	60V,1ANPNlowVCEsat(BISS)transistor 1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. PNPcomplement:PBSS5160QA. 2.Featuresandbenefits ?Verylowcollector-	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS4160QA	文件：266.2 Kbytes Page：17 Pages	60V,1ANPNlowVCEsat(BISS)transistor	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
PBSS4160QA-Q	文件：296.09 Kbytes Page：14 Pages	60V,1ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-Mounted Device(SMD)plasticpackagewithvisibleandsolderablesidepads. 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapabi	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS4160T	文件：111.1 Kbytes Page：10 Pages	60V,1ANPNlowVCEsat(BISS)transistor DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage. PNPcomplement:PBSS5160T. FEATURES ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiency,reducesheatgeneration ?Reducesprinted-circuitboardarearequired ?	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PBSS4160T	文件：466.31 Kbytes Page：6 Pages	SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司	FOSHAN
PBSS4160T	文件：948.33 Kbytes Page：12 Pages	LowVCEsat(BISS)transistors	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PBSS4160T	文件：852.82 Kbytes Page：12 Pages	60V,1ANPNlowVCEsat(BISS)transistor 1.Generaldescription NPNlowVCEsattransistorinasmallSOT23plasticpackage.PNPcomplement:PBSS5160T. 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiency,reducesheatgeneration ?Reducesprint	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA

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詳細(xì)參數(shù)

型號：
NTJS4160N
制造商：
ONSEMI
制造商全稱：
ON Semiconductor
功能描述：
High Efficiency DC-DC Converters

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	NTJS4160N	ON	24+	SOT-363	10		詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	NTJS4160NT1G	ON	23+	US6	30000	原裝正品,假一罰十	詢價(jià)
深圳市鵬和科技有限公司	NTJS4160NT1G	ON	24+	SOT-363	5000	只做原裝公司現(xiàn)貨	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	NTJS4160NT1G	ON	1742+	SOT23	98215	只要網(wǎng)上有絕對有貨!只做原裝正品!	詢價(jià)
深圳宇航軍工半導(dǎo)體有限公司	NTJS4160NT1G	NA	19+	SOT23-6	87751	原廠代理渠道,每一顆芯片都可追溯原廠；	詢價(jià)
深圳市振宏微科技有限公司	NTJS4160NT1G	ONS	23+	NTJS4160NT1G	13528	振宏微原裝正品,假一罰百	詢價(jià)
深圳兆威電子有限公司	NTJS4160NT1G	0N	23+	SOT-363	63000	原裝正品現(xiàn)貨	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	NTJS4160NT1G	ON/安森美	20+	SOT23-6	43000	原裝優(yōu)勢主營型號-可開原型號增稅票	詢價(jià)
深圳市納艾斯科技有限公司	NTJS4160NT1G	ON	2020+	SOT363	80000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
深圳市拓億芯電子有限公司	NTJS4160NT1G	ON/安森美	23+	SOT23-6	30000	代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢	詢價(jià)

更多NTJS4160N供應(yīng)商更新時(shí)間2024-12-28 15:30:00

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