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NP110N04PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=1.4mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplicatio

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.4m?MAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=10500pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP110N04PUK

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUK_V01

MOS FIELD EFFECT TRANSISTOR

Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.4m?MAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=10500pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=1.4mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplicatio

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.4m?MAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=10500pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=1.4mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplicatio

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.4m?MAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=10500pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUK_15

MOS FIELD EFFECT TRANSISTOR

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

SUM110N04

N-Channel40-V(D-S)MOSFET

TFUNKVishay Telefunken

威世威世（VISHAY）集團(tuán)

YFW110N04AD

40VN-CHANNELENHANCEMENTMODEMOSFET

Application Batteryprotection Loadswitch Uninterruptiblepowersupply

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP110N04PUK

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS/瑞薩
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價(jià)
RENESAS/瑞薩
2022+
TO-263
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
RENESAS/瑞薩
22+
TO-263
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
RENESAS/瑞薩
23+
TO-263
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
RENESAS/瑞薩
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
RENESAS/瑞薩
22+
TO-263
12500
瑞薩全系列在售,終端可出樣品
 詢價(jià)
RENESAS/瑞薩
22+
TO-263
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
 詢價(jià)
R
24+
TO263
37650
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
Renesas(瑞薩)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
RENESAS/瑞薩
23+
TO-263
32687
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
更多NP110N04PUK供應(yīng)商 更新時(shí)間2025-1-13 14:50:00

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