首頁(yè) >NP22N055ILE>規(guī)格書(shū)列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
NP22N055ILE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=37mΩMAX.(VGS=10V,ID=11A) RDS(on) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
NP22N055ILE | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
N-Channel60V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PowerSupply -SecondarySynchronousRectification ?DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39m?MAX.(VGS=10V,ID=11A) ?LowCiss:Ciss=590pFTYP. ?Built-in | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) ?LowC | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=37mΩMAX.(VGS=10V,ID=11A) RDS(on) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) ?LowC | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39m?MAX.(VGS=10V,ID=11A) ?LowCiss:Ciss=590pFTYP. ?Built-in | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) ?LowC | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=37mΩMAX.(VGS=10V,ID=11A) RDS(on) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細(xì)參數(shù)
- 型號(hào)：
NP22N055ILE
- 功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 22A I(D) | TO-252VAR
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NEC |
17+ |
TO-252 |
31518 |
原裝正品 可含稅交易 |
詢價(jià) | ||
NEC |
23+ |
TO-252 |
9500 |
專業(yè)優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
NXP |
20+ |
TO-252 |
63258 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
NEC |
23+ |
TO-252 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
NXP/恩智浦 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
NXP/恩智浦 |
2022 |
TO-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
NEC |
23+ |
TO-251 |
4500 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售 |
詢價(jià) | ||
NXP |
TO-252 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
日本NEC |
23+ |
TO-252 |
32767 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
NXP/恩智浦 |
新年份 |
TO-252 |
33288 |
原裝正品現(xiàn)貨,實(shí)單帶TP來(lái)談! |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- NP22N055ILE-E1
- NP22N055SHE-E1-AY
- NP22N055SLE
- NP22N055SLE-E1-AY
- NP2300SAT3G
- NP2300SBT3G
- NP2300SCT3G
- NP236-102002-2
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- NP23I
- NP23N06YDG
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- NP24-1C90-2500-250
- NP2420
- NP24BK
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- NP28LA
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- NP291-04002-2-G4-BF
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相關(guān)庫(kù)存
更多- NP22N055ILE-E1-AZ/JM
- NP22N055SHE-E1-AZ
- NP22N055SLE-E1
- NP2300SAMCT3G
- NP2300SBMCT3G
- NP2300SCMCT3G
- NP236-102002-1
- NP23AL
- NP23GY
- NP23LA
- NP23N06YDG-E1-AY
- NP24
- NP24-12B
- NP24-1A66-5000-213_DE
- NP24-1A66-5000-213-P_DE
- NP24-1A71-5000-213_DE
- NP24-1A71-5000-213-P_DE
- NP24-1C90-2500-250_DE
- NP24AL
- NP24OW
- NP24W
- NP2511B1PQ
- NP25KS
- NP2600SA1
- NP2600SAMCT3G
- NP2600SB1T3G
- NP2600SBT3G
- NP2600SCMCT3G
- NP262
- NP276-110522
- NP276-11904-3
- NP276-16951
- NP276-37206
- NP276-59608
- NP276-87318
- N-P28
- NP284-26409P
- NP28BK
- NP-28GT
- NP28I
- NP28OW
- NP291-04002-2AC-11318
- NP291-04009-2-G4-BF
- NP291-04019
- NP291-04805-1
