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NP34N055IHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=19mΩMAX.(VGS=10V,ID=17A) ?LowCis

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP34N055IHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=19mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP34N055IHE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP34N055ILE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP34N055ILE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP34N055SHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP34N055SHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=19mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP34N055SHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=19mΩMAX.(VGS=10V,ID=17A) ?LowCis

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP34N055SLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP34N055SLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP34N055IHE

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
17+
TO-252
31518
原裝正品 可含稅交易
 詢價(jià)
rene
19+
TO-252
87430
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
RENESAS
20+
TO-252
63258
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
N
23+
TO-252
10000
公司只做原裝正品
 詢價(jià)
RENE
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VB
21+
TO-252
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
RENE
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
VB
TO-252
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
N
23+
TO-252
6000
原裝正品，支持實(shí)單
 詢價(jià)
RENESAS/瑞薩
新年份
TO-252
33288
原裝正品現(xiàn)貨,實(shí)單帶TP來談!
 詢價(jià)
更多NP34N055IHE供應(yīng)商 更新時(shí)間2025-1-26 14:00:00

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