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NP34N055SLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP34N055SLE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP34N055SLE

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP34N055HHE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

NP34N055HHE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP34N055HHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=19mΩMAX.(VGS=10V,ID=17A) ?LowCis

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP34N055HHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=19mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP34N055HLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP34N055HLE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

NP34N055HLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP34N055IHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=19mΩMAX.(VGS=10V,ID=17A) ?LowCis

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP34N055IHE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP34N055IHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=19mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP34N055ILE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP34N055ILE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP34N055SHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=19mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP34N055SHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=19mΩMAX.(VGS=10V,ID=17A) ?LowCis

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP34N055SHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP34N055SLE

  • 功能描述：

    MOSFET N-CH 55V 34A TO-252

  • RoHS：

    是

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列：

    -

  • 標(biāo)準(zhǔn)包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點(diǎn)：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時(shí)的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
17+
TO-252
31518
原裝正品 可含稅交易
 詢價(jià)
NEC
24+
TO-252
8866
詢價(jià)
NEC
23+
TO-252
11741
全新原裝
 詢價(jià)
rene
19+
TO-252
87432
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
Renesas
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
NEC
6000
面議
19
TO-252
 詢價(jià)
Renesas
18+
TO-252
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
NXP
20+
TO-252
63258
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
R
23+
TO-252
10000
公司只做原裝正品
 詢價(jià)
RENESAS/瑞薩
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多NP34N055SLE供應(yīng)商 更新時(shí)間2024-12-23 14:00:00

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