首頁 >NP48N055NHE>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
NP48N055NHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
NP48N055NHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | |
NP48N055NHE | Product Scout Automotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=24A) RDS(on)3=24mΩMAX.(VGS=4.5V,ID=24A) ?Lowinputcapacitance Ciss=1970 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=2 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=24A) RDS(on)3=24mΩMAX.(VGS=4.5V,ID=24A) ?Lowinputcapacitance Ciss=1970 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=2 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細參數(shù)
- 型號：
NP48N055NHE
- 制造商：
NEC
- 制造商全稱：
NEC
- 功能描述：
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
22+ |
TO-262 |
12500 |
瑞薩全系列在售,終端可出樣品 |
詢價 | ||
RENESAS/瑞薩 |
22+ |
TO-262 |
9000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu) |
詢價 | ||
TI/德州儀器 |
23+ |
TO263 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
NATLINEAR/南麟 |
23+ |
SOP8 |
14758 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
NATLINEAR/南麟 |
SOP8 |
90000 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
natlinear(南麟) |
23+ |
SOP8 |
6000 |
誠信服務(wù)，絕對原裝原盤 |
詢價 | ||
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
NPS |
2023+ |
SOP14 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
NPS |
23+ |
SOP14 |
28611 |
只做原裝,專為終端工廠服務(wù),BOM全配。 |
詢價 | ||
富士 |
1844+ |
LQFP |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 |
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