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NP48N055NHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055NHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP48N055NHE

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055NHE-S18-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP48N055NHE-S18-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055NHE-S18-AYNote1

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055CHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP48N055CHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055CHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP48N055CLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP48N055CLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=24A) RDS(on)3=24mΩMAX.(VGS=4.5V,ID=24A) ?Lowinputcapacitance Ciss=1970

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055CLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=2

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP48N055DHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP48N055DHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055DHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP48N055DLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=24A) RDS(on)3=24mΩMAX.(VGS=4.5V,ID=24A) ?Lowinputcapacitance Ciss=1970

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055DLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP48N055DLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=2

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP48N055EHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP48N055EHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    NP48N055NHE

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS/瑞薩
22+
TO-262
12500
瑞薩全系列在售,終端可出樣品
詢價(jià)
RENESAS/瑞薩
22+
TO-262
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
詢價(jià)
TI/德州儀器
23+
TO263
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
NATLINEAR/南麟
23+
SOP8
14758
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價(jià)
NATLINEAR/南麟
SOP8
90000
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價(jià)
natlinear(南麟)
23+
SOP8
6000
誠(chéng)信服務(wù),絕對(duì)原裝原盤
詢價(jià)
24+
N/A
62000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
NPS
2023+
SOP14
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
NPS
23+
SOP14
28611
只做原裝,專為終端工廠服務(wù),BOM全配。
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富士
1844+
LQFP
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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更多NP48N055NHE供應(yīng)商 更新時(shí)間2024-12-25 13:56:00