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NP55N04SLG

MOS FIELD EFFECT TRANSISTOR

Description TheNP55N04SLGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Channeltemperature175degreerating ?Superlowon-stateresistance ?RDS(on)1=6.5mΩMAX.(VGS=10V,ID=28A) ?RDS(on)2=8.5mΩMAX.(VGS=5V,I

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP55N04SLG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP55N04SLG

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP55N04SLG-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP55N04SLGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Channeltemperature175degreerating ?Superlowon-stateresistance ?RDS(on)1=6.5mΩMAX.(VGS=10V,ID=28A) ?RDS(on)2=8.5mΩMAX.(VGS=5V,I

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP55N04SLG-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP55N04SLGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Channeltemperature175degreerating ?Superlowon-stateresistance ?RDS(on)1=6.5mΩMAX.(VGS=10V,ID=28A) ?RDS(on)2=8.5mΩMAX.(VGS=5V,I

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP55N04SLG_15

MOS FIELD EFFECT TRANSISTOR

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP55N04SUG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP55N04SUG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP55N04SUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerating ?Superlowon-stateresistance RDS(on)=6.5mΩMAX.(VGS=10V,ID=28A) ?Lowinputcapacitance Ciss=3400pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP55N04SUG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PJD55N04S-AU

40VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP55N04SLG

  • 制造商：

    RENESAS

  • 制造商全稱(chēng)：

    Renesas Technology Corp

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS/瑞薩
23+
TO-252
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢(xún)價(jià)
RENESAS/瑞薩
22+
TO-252
12500
瑞薩全系列在售,終端可出樣品
 詢(xún)價(jià)
RENESAS/瑞薩
22+
TO-252
9000
專(zhuān)業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
 詢(xún)價(jià)
RENESAS
23+
TO252
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
 詢(xún)價(jià)
RENESAS/瑞薩
1948+
TO252
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢(xún)價(jià)
NEC
22+
SOT-252
20000
保證原裝正品,假一陪十
 詢(xún)價(jià)
RENESAS/瑞薩
23+
SOT252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
RENESAS/瑞薩
21+
SOT252
10000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
RENESAS/瑞薩
2022+
SOT252
8500
原廠(chǎng)代理 終端免費(fèi)提供樣品
 詢(xún)價(jià)
RENESAS/瑞薩
23+
TO252
33000
原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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更多NP55N04SLG供應(yīng)商 更新時(shí)間2025-3-29 8:10:00

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