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NP80N03CLE

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03CLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=26

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03CLE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP80N03CLE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03CLE-S12-AZ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=26

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03CLE-S12-AZ

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03DDE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03DDE

MOSFIELDEFFECTTRANSISTOR

FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03DDE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP80N03DLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=26

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03DLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP80N03DLE

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03DLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03EDE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03EDE

MOSFIELDEFFECTTRANSISTOR

FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03EDE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP80N03ELE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP80N03ELE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=26

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03ELE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03ELE

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào):

    NP80N03CLE

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

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8866
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NEC
23+
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NEC
6000
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19
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NEC-1
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10000
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NEC
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6000
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VB
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68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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日本NEC
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NEC
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NEC
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更多NP80N03CLE供應(yīng)商 更新時(shí)間2024-11-9 10:02:00