首頁(yè) >NP80N055CHE>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
NP80N055CHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | |
NP80N055CHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=40A) RDS(on)3=15mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2900 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=4 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC |
詳細(xì)參數(shù)
- 型號(hào):
NP80N055CHE
- 功能描述:
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-220AB
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
NEC |
24+ |
TO-220AB |
8866 |
詢價(jià) | |||
NEC |
6000 |
面議 |
19 |
TO-220AB |
詢價(jià) | ||
VB |
21+ |
TO-220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
NEC |
2022+ |
TO-220AB |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
R |
23+ |
TO-220 |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
R |
22+ |
TO-220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
R |
24+ |
TO-TO-220 |
12300 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
NEC |
23+ |
TO-252 |
9500 |
專業(yè)優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
VBSEMI/臺(tái)灣微碧 |
23+ |
TO-220AB |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VBsemi |
23+ |
TO220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
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