首頁 >NP82N04MDG>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

NP82N04MDG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04MDG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04MDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N04MDGandNP82N04NDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance RDS(on)1=4.2mΩMAX.(VGS=10V,ID=41A) RDS(on)2=8.5mΩMAX.(VGS=4.5V,ID=41A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04MDG

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04MDG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N04MDGandNP82N04NDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance RDS(on)1=4.2mΩMAX.(VGS=10V,ID=41A) RDS(on)2=8.5mΩMAX.(VGS=4.5V,ID=41A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04MLG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04MLG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04MLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04MUG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP82N04MUGandNP82N04NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Nonlogiclevel ?Superlowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=41A) ?Highcurrentrating ID(DC)=±82A ?Lowi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04MUG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04MUG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04MUG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04NDG

iscN-ChannelMOSFETTransistor

FEATURES DrainCurrent-ID=82A@TC=25℃ DrainSourceVoltage-VDSS=40V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04NDG

iscN-ChannelMOSFETTransistor

FEATURES DrainCurrent-ID=82A@TC=25℃ DrainSourceVoltage-VDSS=40V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04NDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP82N04MDGandNP82N04NDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance RDS(on)1=4.2mΩMAX.(VGS=10V,ID=41A) RDS(on)2=8.5mΩMAX.(VGS=4.5V,ID=41A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04NDG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04NLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04NLG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04NUG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04NUG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    NP82N04MDG

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
23+
TO-220
33000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
RENESAS/瑞薩
23+
TO-220
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
RENESAS/瑞薩
22+
TO-220
12500
瑞薩全系列在售,終端可出樣品
 詢價
RENESAS/瑞薩
22+
TO-220
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
NEC
2016+
TO-220
3900
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
NEC
21+
TO-220
30000
只做正品原裝現(xiàn)貨
 詢價
NEC
22+
TO-220
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單!
 詢價
R
23+
TO220
10000
公司只做原裝正品
 詢價
VB
21+
TO220
10000
原裝現(xiàn)貨假一罰十
 詢價
NEC
TO-220
貨真價實,假一罰十
25000
詢價
更多NP82N04MDG供應(yīng)商 更新時間2025-1-13 16:05:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多