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NP82N06MLG

N-Channel 60 V (D-S) MOSFET

FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization:

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

NP82N06MLG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP82N06MLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06MLG

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06MLG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06NLG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP82N06NLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06NLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06PDG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06PDG

SWITCHINGN-CHANNELPOWERMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP82N06MLG

  • 制造商：

    RENESAS

  • 制造商全稱(chēng)：

    Renesas Technology Corp

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
R
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢(xún)價(jià)
達(dá)高TECCOR
23+
TO-220
69820
終端可以免費(fèi)供樣,支持BOM配單!
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VB
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
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RENESAS/瑞薩
23+
TO-220
89630
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RENESAS/瑞薩
22+
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12500
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RENESAS/瑞薩
22+
TO-220
9000
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R
24+
TO-TO-220
12300
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NEC
23+
MP-25SKTO-262
33000
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RENESAS(瑞薩)/IDT
23+
TO262
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠(chǎng)技術(shù)支持!!!
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24+
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69000
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更多NP82N06MLG供應(yīng)商 更新時(shí)間2025-3-10 10:23:00

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