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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
NP84N04DHE	文件：224.97 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP84N04DHE	文件：429.99 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N04DHE	文件：242.41 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP84N04DHE-S12-AY	文件：224.97 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP84N04DHE-S12-AY	文件：429.99 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N04EHE	文件：429.99 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N04EHE	文件：224.97 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP84N04EHE	文件：306.44 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP84N04KHE	文件：429.99 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N04KHE	文件：306.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP84N04KHE	文件：224.97 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP84N04KHE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N04MHE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N04MHE	文件：429.99 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N04MHE	文件：224.97 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP84N04MHE	文件：333.35 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP84N04NHE	文件：242.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP84N04NHE	文件：429.99 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N04NHE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N04NHE	文件：224.97 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC

詳細(xì)參數(shù)

型號(hào)：
NP84N04DHE
制造商：
NEC
制造商全稱：
NEC
功能描述：
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	NP84N04DHE	NEC	24+	TO-262	8866		詢價(jià)
深圳市近平電子有限公司	NP84N04DHE	NEC	6000	面議	19	TO-262	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	NP84N04DHE	NEC	23+	TO-262	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
京海半導(dǎo)體(深圳)有限公司	NP84N04DHE	NEC	21+	TO-262	10000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市特萊科技有限公司	NP84N04DHE	NEC	24+23+	TO-262	12580	16年現(xiàn)貨庫(kù)存供應(yīng)商終端BOM表可配單提供樣品	詢價(jià)
深圳市得捷芯城科技有限公司	NP84N04DHE	NEC	23+	NA/	10000	優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票	詢價(jià)
深圳市創(chuàng)盛芯科技有限公司	NP84N04DHEMOS(場(chǎng)效應(yīng)管)	NEC	24+	TO-262	15000	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳廊盛科技有限公司	NP84N04DHEMOS(場(chǎng)效應(yīng)管)	NEC	2022	TO-262	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	NP84N04EHE	NEC	23+	TO-263	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	NP84N04EHE	NEC	TO-263	22+	6000	十年配單,只做原裝	詢價(jià)

更多NP84N04DHE供應(yīng)商更新時(shí)間2024-11-14 15:30:00

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