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NP84N075CUE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=5600pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N075CUE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=5600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N075CUE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP84N075CUE-S12-AZ

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=5600pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N075CUE-S12-AZ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=5600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N075CUE-S12-AZNote1,2

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N075DUE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP84N075DUE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=5600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N075DUE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=5600pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N075EUE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=5600pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N075EUE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=5600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N075KUE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N075KUE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=5600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N075KUE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP84N075KUE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=5600pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N075MUE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N075MUE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=5600pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N075MUE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=5600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N075NUE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP84N075NUE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=5600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號:

    NP84N075CUE

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
TO-220AB
8866
詢價
NEC
05+
原廠原裝
1349
只做全新原裝真實現(xiàn)貨供應(yīng)
詢價
NEC
6000
面議
19
TO-220AB
詢價
JINGDAO/晶導(dǎo)微
23+
SMB(DO-214AA)
69820
終端可以免費供樣,支持BOM配單!
詢價
NEC
23+
TO-220
10000
公司只做原裝正品
詢價
NEC
22+
TO-220
6000
十年配單,只做原裝
詢價
NEC
23+
TO-220
6000
原裝正品,支持實單
詢價
NEC
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價
NEC
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
VB
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
詢價
更多NP84N075CUE供應(yīng)商 更新時間2024-12-27 15:30:00