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NP86N04EHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP86N04EHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP86N04EHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=86A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP86N04EHE-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP86N04EHE-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP86N04EHE-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP86N04EHE-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP86N04KHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=86A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP86N04KHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP86N04KHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP86N04KHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP86N04MHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP86N04MHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP86N04MHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP86N04NHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP86N04NHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP86N04NHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    NP86N04EHE

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

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TECCOR
23+
TO-220
69820
終端可以免費供樣,支持BOM配單!
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NEC
23+
TO-263
10000
公司只做原裝正品
 詢價
NEC
22+
TO-263
6000
十年配單,只做原裝
 詢價
日本NEC
23+
TO-263
33000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
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NEC
23+
TO-263
6000
原裝正品，支持實單
 詢價
NEC
22+
TO-263
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
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NEC
24+
TO-263
35400
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
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NEC
24+
TO-263
8866
詢價
NEC
6000
面議
19
TO-263
 詢價
NEC
2023+
TO-263
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
更多NP86N04EHE供應(yīng)商 更新時間2024-11-14 10:36:00

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