| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP84N03KUFisN-channelMOSFieldEffect Transistordesignedforhighcurrentapplications. FEATURES ?Channeltemperature175degreerating ?Superlowon-stateresistance RDS(on)=3.0mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss= | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細(xì)參數(shù)
- 型號(hào)：
NP84
- 功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 84A I(D) | TO-220AB
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
TO-220AB |
8866 |
詢價(jià) | |||
NEC |
6000 |
面議 |
19 |
TO-220AB |
詢價(jià) | ||
JINGDAO/晶導(dǎo)微 |
23+ |
SMA(DO-214AC) |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
NEC |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
NEC |
23+ |
TO-220 |
6000 |
原裝正品，支持實(shí)單 |
詢價(jià) | ||
NEC |
22+ |
TO-220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
NEC |
24+ |
TO-TO-220 |
37650 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
R |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
VB |
21+ |
TO-220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
VB |
TO-220 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) |
相關(guān)規(guī)格書
更多- NP84N04CHE-S12-AZ
- NP84N04DHE-S12-AY
- NP84N04EHE-E1-AY
- NP84N04KHE
- NP84N04KHE-E2-AY
- NP84N04MHE-S18-AY
- NP84N04NHE-S18-AY
- NP84N055CHE-S12-AZ
- NP84N055CLE-S12-AZ
- NP84N055DHE-S12-AY
- NP84N055DLE-S12-AY
- NP84N055EHE-E1-AY
- NP84N055ELE
- NP84N055ELE-E2-AY
- NP84N055KHE-E1
- NP84N055KHE-E2-AY
- NP84N055KLE-E1-AY
- NP84N055MHE
- NP84N055MLE
- NP84N055NHE
- NP84N055NLE
- NP84N075CUE
- NP84N075DUE
- NP84N075EUE
- NP84N075EUE-E2-AY
- NP84N075KUE-E1-AY
- NP84N075MUE
- NP84N075NUE
- NP84W
- NP866B
- NP86N04CHE-S12-AZ
- NP86N04DHE-S12-AY
- NP86N04EHE-E1-AY
- NP86N04KHE
- NP86N04KHE-E2-AY
- NP86N04MHE-S18-AY
- NP86N04NHE-S18-AY
- NP88N03KUG-E1
- NP88N03KUG-E1-AZ
- NP88N04CHE-S12-AZ
- NP88N04DHE-S12-AY
- NP88N04EHE-E1-AY
- NP88N04KHE
- NP88N04KHE-E1-AY
- NP88N04KUG-E1
相關(guān)庫(kù)存
更多- NP84N04DHE
- NP84N04EHE
- NP84N04EHE-E2-AY
- NP84N04KHE-E1-AY
- NP84N04MHE
- NP84N04NHE
- NP84N055CHE
- NP84N055CLE
- NP84N055DHE
- NP84N055DLE
- NP84N055EHE
- NP84N055EHE-E2-AY
- NP84N055ELE-E1-AY
- NP84N055KHE
- NP84N055KHE-E1-AY
- NP84N055KLE
- NP84N055KLE-E2-AY
- NP84N055MHE-S18-AY
- NP84N055MLE-S18-AY
- NP84N055NHE-S18-AY
- NP84N055NLE-S18-AY
- NP84N075CUE-S12-AZ
- NP84N075DUE-S12-AY
- NP84N075EUE-E1-AY
- NP84N075KUE
- NP84N075KUE-E2-AY
- NP84N075MUE-S18-AY
- NP84N075NUE-S18-AY
- NP865B
- NP86N04CHE
- NP86N04DHE
- NP86N04EHE
- NP86N04EHE-E2-AY
- NP86N04KHE-E1-AY
- NP86N04MHE
- NP86N04NHE
- NP88N03KDG-E1-AY
- NP88N03KUG-E1-AY
- NP88N04CHE
- NP88N04DHE
- NP88N04EHE
- NP88N04EHE-E2-AY
- NP88N04KHE-E1
- NP88N04KHE-E2-AY
- NP88N04KUG-E1-AY
