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首頁(yè) >NP84N055DHE>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
NP84N055DHE	文件：219.92 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP84N055DHE	文件：306.34 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N055DHE	文件：242.42 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP84N055DHE-S12-AY	文件：219.92 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP84N055DHE-S12-AY	文件：306.34 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N055DHE-S12-AYNote1,	文件：306.92 Kbytes Page：12 Pages	SWITCHING N-CHANNEL POWER MOS FET	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N055DLE	文件：243.21 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP84N055DLE	文件：429.84 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) ?Lowinputcapacitance Ciss=6	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N055DLE	文件：224.36 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP84N055EHE	文件：219.92 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP84N055EHE	文件：306.34 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N055EHE	文件：306.45 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP84N055ELE	文件：307.26 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP84N055ELE	文件：429.84 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) ?Lowinputcapacitance Ciss=6	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N055ELE	文件：224.36 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP84N055KHE	文件：219.92 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP84N055KHE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N055KHE	文件：306.34 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP84N055KHE	文件：306.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP84N055KLE	文件：307.58 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC

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詳細(xì)參數(shù)

型號(hào)：
NP84N055DHE
功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 84A I(D) | TO-262AA

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	NP84N055DHE	NEC	24+	TO-262	8866		詢價(jià)
深圳市近平電子有限公司	NP84N055DHE	NEC	6000	面議	19	TO-262	詢價(jià)
京海半導(dǎo)體(深圳)有限公司	NP84N055EHE	NEC	21+	SOT-263	10000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市河鋒鑫科技有限公司	NP84N055EHE	NEC	TO-263	22+	6000	十年配單,只做原裝	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	NP84N055EHE	NEC	23+	TO-263	6000	原裝正品，支持實(shí)單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	NP84N055EHE	NEC	22+	TO-263	25000	只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單	詢價(jià)
深圳市宏捷佳電子科技有限公司	NP84N055EHE	NEC	24+	TO-263	12300	獨(dú)立分銷(xiāo)商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	NP84N055ELE	FAIRCHILD/仙童	23+	TO-251(IPAK)	69820	終端可以免費(fèi)供樣,支持BOM配單!	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	NP84N055ELE	NEC	23+	TO-263	10000	公司只做原裝正品	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	NP84N055KHE	RENESAS/瑞薩	23+	TO-263	33000	原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)

更多NP84N055DHE供應(yīng)商更新時(shí)間2025-1-14 10:01:00

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