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NP82N06NLG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP82N06NLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06NLG

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06NLG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06CLC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=9.0mW(MAX.)(VGS=10V,ID=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06CLD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP82N06CLD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=8.5mW(MAX.)(VGS=10V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06DLC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=9.0mW(MAX.)(VGS=10V,ID=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06DLD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP82N06DLD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=8.5mW(MAX.)(VGS=10V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06ELC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=9.0mW(MAX.)(VGS=10V,ID=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06ELD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=8.5mW(MAX.)(VGS=10V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06ELD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP82N06MLG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP82N06MLG

N-Channel60V(D-S)MOSFET

FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization:

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

NP82N06MLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06MLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06PDG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06PDG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP82N06PDG

SWITCHINGN-CHANNELPOWERMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    NP82N06NLG

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應商型號品牌批號封裝庫存備注價格
NEC
23+
MP-25SKTO-262
33000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
RENESAS/瑞薩
22+
TO-262
12500
瑞薩全系列在售,終端可出樣品
 詢價
RENESAS/瑞薩
22+
TO-262
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
RENESAS(瑞薩)/IDT
23+
TO262
7350
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!!
 詢價
NEC(日電電子)
23+
TO262
6000
誠信服務，絕對原裝原盤
 詢價
24+
N/A
69000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
NEC
24+
TO-263
8866
詢價
NEC
6000
面議
19
TO-263
 詢價
RENESAS/瑞薩
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價
NEC
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多NP82N06NLG供應商 更新時間2025-1-13 16:05:00

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