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NP82N06CLC

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=9.0mW(MAX.)(VGS=10V,ID=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06CLD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N06CLD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=8.5mW(MAX.)(VGS=10V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06DLC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=9.0mW(MAX.)(VGS=10V,ID=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06DLD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N06DLD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=8.5mW(MAX.)(VGS=10V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06ELC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=9.0mW(MAX.)(VGS=10V,ID=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06ELD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=8.5mW(MAX.)(VGS=10V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06ELD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N06MLG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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R
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69820
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VB
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89630
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RENESAS/瑞薩
22+
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12500
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RENESAS/瑞薩
22+
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9000
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R
24+
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12300
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NEC
23+
MP-25SKTO-262
33000
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7350
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更多NP82N06CLC供應(yīng)商 更新時間2025-1-28 10:20:00

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