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NP82N055DHE

MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP82N055DHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055DHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N055DHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP82N055DHE-S12-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055DHE-S12-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP82N055DLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N055DLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP82N055DLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) ?Lowinputcapacitance Ciss=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055EHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055EHE

MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP82N055EHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP82N055EHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N055ELE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N055ELE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP82N055ELE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) ?Lowinputcapacitance Ciss=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055KHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055KHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055KHE

MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP82N055KHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    NP82N055DHE

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
TO-262
8866
詢價
NEC
6000
面議
19
TO-262
 詢價
NEC
TO-263
22+
6000
十年配單,只做原裝
 詢價
日本NEC
23+
TO-263
33000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
NEC
23+
TO-263
6000
原裝正品，支持實單
 詢價
NEC
22+
TO-263
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
NEC
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
1922+
TO-263
216
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
NEC
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
 詢價
RENESAS/瑞薩
23+
TO-251
69820
終端可以免費供樣,支持BOM配單!
 詢價
更多NP82N055DHE供應(yīng)商 更新時間2024-11-14 15:30:00

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