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首頁 >NP82N055NUG>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
NP82N055NUG	文件：319.92 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP82N055MUGandNP82N055NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Nonlogiclevel ?Superlowon-stateresistance RDS(on)=6.0mΩMAX.(VGS=10V,ID=41A) ?Highcurrentrating ID(DC)=±82A ?Low	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP82N055NUG	文件：242.21 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP82N055NUG	文件：5.67799 Mbytes Page：6 Pages	Product Scout Automotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP82N055NUG-S18-AY	文件：319.92 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP82N055MUGandNP82N055NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Nonlogiclevel ?Superlowon-stateresistance RDS(on)=6.0mΩMAX.(VGS=10V,ID=41A) ?Highcurrentrating ID(DC)=±82A ?Low	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
82N055	文件：319.92 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP82N055MUGandNP82N055NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Nonlogiclevel ?Superlowon-stateresistance RDS(on)=6.0mΩMAX.(VGS=10V,ID=41A) ?Highcurrentrating ID(DC)=±82A ?Low	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP82N055CHE	文件：421.05 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP82N055CHE	文件：214 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP82N055CHE	文件：77.36 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP82N055CHE	文件：333.59 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP82N055CLE	文件：333.96 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP82N055CLE	文件：226.05 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP82N055CLE	文件：431.49 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) ?Lowinputcapacitance Ciss=4	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP82N055DHE	文件：421.05 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP82N055DHE	文件：214 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP82N055DHE	文件：77.36 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP82N055DHE	文件：242.66 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP82N055DLE	文件：243 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP82N055DLE	文件：226.05 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP82N055DLE	文件：431.49 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) ?Lowinputcapacitance Ciss=4	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP82N055EHE	文件：421.05 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS

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詳細(xì)參數(shù)

型號：
NP82N055NUG
制造商：
RENESAS
制造商全稱：
Renesas Technology Corp
功能描述：
MOS FIELD EFFECT TRANSISTOR

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市晨豪科技有限公司	NP82N055NUG	RENESAS/瑞薩	23+	TO-262	89630	當(dāng)天發(fā)貨全新原裝現(xiàn)貨	詢價(jià)
深圳市星辰微電科技有限公司	NP82N055NUG	RENESAS/瑞薩	22+	TO-262	12500	瑞薩全系列在售,終端可出樣品	詢價(jià)
深圳市芯皇電子有限公司	NP82N055NUG	RENESAS/瑞薩	22+	TO-262	9000	專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	NP82N055NUG-S18-AY	RENESAS/瑞薩	23+	TO-262	10000	公司只做原裝正品	詢價(jià)
深圳市高捷芯城科技有限公司	NP82N055NUG-S18-AY	RENESAS(瑞薩)/IDT	23+	TO262	7350	現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!	詢價(jià)
深圳市弘揚(yáng)芯城科技有限公司	NP82N055NUG-S18-AY	RENESAS(瑞薩)/IDT	23+	TO262	6000	誠信服務(wù)，絕對原裝原盤	詢價(jià)
現(xiàn)代芯城（深圳）科技有限公司	NP82N055NUG-S18-AY		24+	N/A	58000	一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇	詢價(jià)
深圳市一線半導(dǎo)體有限公司	NP82N055PUG	NEC	24+	TO-263	8866		詢價(jià)
深圳市近平電子有限公司	NP82N055PUG	NEC	6000	面議	19	TO-263	詢價(jià)
深圳市仟禧電子有限公司	NP82N055PUG	RENESAS/瑞薩	22+	TO-263	20000	保證原裝正品,假一陪十	詢價(jià)

更多NP82N055NUG供應(yīng)商更新時(shí)間2024-12-27 11:19:00

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