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NP83P04PDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=?10V,ID=?41.5A) RDS(on)2=8.0mΩMAX.(VGS=?4.5V,ID=?41.5A) ?Highcurrentrating:I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP83P04PDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=?10V,ID=?41.5A) RDS(on)2=8.0mΩMAX.(VGS=?4.5V,ID=?41.5A) ?Highcurrentrating:I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP83P04PDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=?10V,ID=?41.5A) RDS(on)2=8.0mΩMAX.(VGS=?4.5V,ID=?41.5A) ?Highcurrentrating:I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP83P06PDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8.8mΩMAX.(VGS=?10V,ID=?41.5A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41.5A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP83P06PDG

-60V – -83A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=8.8m?Max.(VGS=-10V,ID=-41.5A) RDS(on)=12m?Max.(VGS=-4.5V,ID=-41.5A) ?Lowinputcapacitance:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP83P06PDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8.8mΩMAX.(VGS=?10V,ID=?41.5A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41.5A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP83P06PDG-E1-AY

-60V – -83A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=8.8m?Max.(VGS=-10V,ID=-41.5A) RDS(on)=12m?Max.(VGS=-4.5V,ID=-41.5A) ?Lowinputcapacitance:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP83P06PDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8.8mΩMAX.(VGS=?10V,ID=?41.5A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41.5A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP83P04PDG

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP83P04PDG_15

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP83

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
24+
TO-263
503173
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
24+
8866
詢價(jià)
Renesas
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
NEC
6000
面議
19
TO-252
 詢價(jià)
RENESAS/瑞薩
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價(jià)
RENESAS/瑞薩
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
RENESAS/瑞薩
2022+
TO-263
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
NEC
23+
TO-252
6000
原裝正品，支持實(shí)單
 詢價(jià)
RENESAS/瑞薩
17+
TO-263
56
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
RENESAS/瑞薩
22+
TO-263
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
更多NP83供應(yīng)商 更新時(shí)間2025-4-21 16:40:00

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