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NP80N04NHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N04NHE

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NHE-S18-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N04NHE-S18-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NHE-S18-AYNote1

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP80N04MLG,NP80N04NLG,andNP80N04PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N04MLG,NP80N04NLG RDS(on)1=4.8mΩMAX

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NUG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NUG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP80N04NUGandNP80N04PUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Nonlogiclevel ?Superlowon-stateresistance -NP80N04NUG RDS(on)=4.8mΩMAX.(VGS=10V,ID=40A) -NP80N04PUG RDS(on

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP80N04NHE

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
21+
TO-220
12588
原裝正品,自己庫存 假一罰十
 詢價(jià)
RENESAS/瑞薩
23+
TO-262
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
RENESAS/瑞薩
22+
TO-262
12500
瑞薩全系列在售,終端可出樣品
 詢價(jià)
RENESAS/瑞薩
22+
TO-262
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
 詢價(jià)
RENESAS/瑞薩
23+
TO-262
10000
公司只做原裝正品
 詢價(jià)
24+
N/A
73000
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
APEC/富鼎
23+
TO-252
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
NEC
23+
TO-262
33000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
RENESAS/瑞薩
21+正納原裝現(xiàn)貨
TO-262
1000
十年以上分銷商原裝進(jìn)口件服務(wù)型
 詢價(jià)
R
24+
TO-263
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
更多NP80N04NHE供應(yīng)商 更新時(shí)間2025-1-27 15:48:00

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