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NP80N04CHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04CHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N04CHE-S12-AZ

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N04CHE-S12-AZ

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04DHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N04DHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04DHE-S12-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N04DHE-S12-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04EHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N04EHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    NP80N04

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 80A I(D) | TO-220AB

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
TO-220AB
8866
詢價
NEC
6000
面議
19
TO-220AB
 詢價
NEC
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VBsemi
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價
NEC
24+
TO-220
3750
原裝現(xiàn)貨假一賠十
 詢價
NEC
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
NEC
2022+
TO-220AB
12888
原廠代理 終端免費提供樣品
 詢價
NEC
23+
TO-220
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
 詢價
NEC
TO-220
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
更多NP80N04供應(yīng)商 更新時間2025-1-28 13:30:00

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