首頁 >NTBG080N120SC1>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
NTBG080N120SC1 | Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(Typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(Typ.Coss=79pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typic | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NTBG080N120SC1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, D2PAK-7L Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(Typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(Typ.Coss=79pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typic | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NTBG080N120SC1 | SiC N-Channel MOSFET FEATURES ·LowEffectiveOutputCapacitance ·UltraLowGateCharge APPLICATIONS ·MainInverters ·GeneralPurposeInverters ·DC/DCConverter ·UPS | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
NTBG080N120SC1 | MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 1200 V, 80 m, 30 A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(Typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(Typ.Coss=79pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typic | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, D2PAK-7L Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(Typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(Typ.Coss=79pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typic | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??N??hannel,SiliconCarbide1200V,80m | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–EliteSiC,80mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?U | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel1200V,80m,31A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel1200V,80m,31A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?U | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel1200V,80m,31A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(Typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(Typ.Coss=79pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevel | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??N??hannel,SiliconCarbide1200V,80m Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterc | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
D2PAK7 (TO-263-7L HV) |
100000 |
全新原裝 |
詢價 | ||
onsemi |
24+ |
D2PAK-7 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
onsemi(安森美) |
23+ |
D2PAK-7L |
8357 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
ON |
21+ |
NA |
3000 |
進口原裝 假一罰十 現(xiàn)貨 |
詢價 | ||
ON |
21+ |
NA |
3000 |
進口原裝 假一罰十 現(xiàn)貨 |
詢價 | ||
ON |
23+ |
原廠原封 |
800 |
訂貨1周 原裝正品 |
詢價 | ||
ON/安森美 |
22+ |
24000 |
原裝正品現(xiàn)貨,實單可談,量大價優(yōu) |
詢價 | |||
ON(安森美) |
24+23+ |
12580 |
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品 |
詢價 | |||
ON |
22+ |
NA |
17261 |
原裝正品支持實單 |
詢價 | ||
24+ |
N/A |
60000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 |
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