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NVC080N120SC1

MOSFET ??N??hannel, Silicon Carbide 1200 V, 80 m

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG080N120SC1

SiCN-ChannelMOSFET

FEATURES ·LowEffectiveOutputCapacitance ·UltraLowGateCharge APPLICATIONS ·MainInverters ·GeneralPurposeInverters ·DC/DCConverter ·UPS

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTBG080N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,80mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(Typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(Typ.Coss=79pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typic

ONSEMION Semiconductor

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NTBG080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(Typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(Typ.Coss=79pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typic

ONSEMION Semiconductor

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NTBG080N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,80m,30A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTC080N120SC1

MOSFET??N??hannel,SiliconCarbide1200V,80m

ONSEMION Semiconductor

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NTHL080N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,80mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?U

ONSEMION Semiconductor

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NTHL080N120SC1

MOSFET-SiCPower,SingleN-Channel1200V,80m,31A

ONSEMION Semiconductor

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NTHL080N120SC1A

MOSFET-SiCPower,SingleN-Channel1200V,80m,31A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1A

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?U

ONSEMION Semiconductor

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NTHL080N120SC1D

MOSFET-SiCPower,SingleN-Channel1200V,80m,31A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(Typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(Typ.Coss=79pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevel

ONSEMION Semiconductor

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NVBG080N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVHL080N120SC1

MOSFET-SiCPower,SingleN-Channel

ONSEMION Semiconductor

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NVHL080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterc

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVHL080N120SC1A

MOSFET-SiCPower,SingleN-Channel

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON
23+
-
100000
全新原裝
詢價(jià)
24+
3000
公司存貨
詢價(jià)
NEXTCHIP
23+
QFP
2870
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購!
詢價(jià)
NEXTCHIP
16+
QFP
2500
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
詢價(jià)
NEXTCHIP
2016+
QFP160
6528
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
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原廠正品
23+
QFP
5000
原裝正品,假一罰十
詢價(jià)
NEXTCHIP
24+
QFP
6980
原裝現(xiàn)貨,可開13%稅票
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NEXTCHIP
23+
QFP
1004
全新原裝現(xiàn)貨
詢價(jià)
2339+
QFP
5825
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!
詢價(jià)
NEXTCHIP
22+
QFP
5000
全新原裝現(xiàn)貨!價(jià)格優(yōu)惠!可長(zhǎng)期
詢價(jià)
更多NVC080N120SC1供應(yīng)商 更新時(shí)間2024-11-28 16:20:00