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NTC020N120SC1

MOSFET ??N??hannel, Silicon Carbide 1200 V, 20 m

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG020N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG020N120SC1

SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG020N120SC1

MOSFET-Power,SiliconCarbide,SingleN-Channel,D2PAK7L,1200V,98A,20mOhm

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL020N120SC1

MOSFET-SiCPower,SingleN-Channel

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL020N120SC1

SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boos

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL020N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boost

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL020N120SC1D

MOSFET-SiCPower,SingleN-Channel

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG020N120SC1

SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(typ.QG(tot)=220nC) ?LowEffectiveOutputCapacitance(typ.Coss=258pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondleve

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG020N120SC1

MOSFET-Power,SiliconCarbide,SingleN-ChannelD2PAK7L,1200V,98A,20mOhm

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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更多NTC020N120SC1供應(yīng)商 更新時(shí)間2025-2-8 15:00:00

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