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首頁(yè) >NTBG020N120SC1>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
NTBG020N120SC1	文件：349.03 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typi	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTBG020N120SC1	文件：346.77 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, D2PAK-7L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typi	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTBG020N120SC1	文件：368.04 Kbytes Page：7 Pages	MOSFET - Power, Silicon Carbide, Single N-Channel, D2PAK7L, 1200 V, 98 A, 20 mOhm	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTBG020N120SC1_V01	文件：349.03 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typi	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTBG020N120SC1_V02	文件：346.77 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, D2PAK-7L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typi	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTC020N120SC1	文件：215.21 Kbytes Page：8 Pages	MOSFET??N??hannel,SiliconCarbide1200V,20m	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTHL020N120SC1	文件：304.71 Kbytes Page：7 Pages	SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boost	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTHL020N120SC1	文件：303.4 Kbytes Page：7 Pages	SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boos	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTHL020N120SC1	文件：313.64 Kbytes Page：7 Pages	MOSFET-SiCPower,SingleN-Channel	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTHL020N120SC1D	文件：313.64 Kbytes Page：7 Pages	MOSFET-SiCPower,SingleN-Channel	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NVBG020N120SC1	文件：323.84 Kbytes Page：7 Pages	SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(typ.QG(tot)=220nC) ?LowEffectiveOutputCapacitance(typ.Coss=258pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondleve	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NVBG020N120SC1	文件：372.95 Kbytes Page：7 Pages	MOSFET-Power,SiliconCarbide,SingleN-ChannelD2PAK7L,1200V,98A,20mOhm	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NVC020N120SC1	文件：215.25 Kbytes Page：8 Pages	MOSFET??N??hannel,SiliconCarbide1200V,20m Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NVHL020N120SC1	文件：304.82 Kbytes Page：7 Pages	SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(typ.QG(tot)=203nC) ?LowEffectiveOutputCapacitance(typ.Coss=260pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinte	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NVHL020N120SC1	文件：239.13 Kbytes Page：7 Pages	MOSFET-SiCPower,SingleN-Channel	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市宇爍芯半導(dǎo)體科技有限公司	NTBG020N120SC1	ON	23+	D2PAK7 (TO-263-7L HV)	100000	全新原裝	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	NTBG020N120SC1	onsemi	24+	D2PAK-7	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢價(jià)
深圳市高捷芯城科技有限公司	NTBG020N120SC1	onsemi(安森美)	23+	TO-263-7	8357	支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。	詢價(jià)
柒號(hào)芯城電子商務(wù)(深圳)有限公司	NTBG020N120SC1	ON	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
艾睿國(guó)際（香港）有限公司	NTBG020N120SC1	ON(安森美)	2117+	TO-252-3	315000	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
深圳市達(dá)恩科技有限公司	NTBG020N120SC1	ON	21+	NA	3000	進(jìn)口原裝假一罰十現(xiàn)貨	詢價(jià)
深圳市盈盛科創(chuàng)科技有限公司	NTBG020N120SC1	ON	21+	NA	3000	進(jìn)口原裝假一罰十現(xiàn)貨	詢價(jià)
深圳市振宏微科技有限公司	NTBG020N120SC1	ON	23+	原廠原封	45	訂貨1周原裝正品	詢價(jià)
深圳市恒科翔業(yè)電子有限公司	NTBG020N120SC1	ON/安森美	22+		24000	原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)	詢價(jià)
深圳市億聯(lián)芯電子科技有限公司	NTBG020N120SC1	onsemi	23+	D2PAK-7	1356	原廠正品現(xiàn)貨SiC MOSFET全系列	詢價(jià)

更多NTBG020N120SC1供應(yīng)商更新時(shí)間2024-11-14 16:21:00

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