首頁 >NTBG040N120SC1>規(guī)格書列表
| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
NTBG040N120SC1 | Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7 Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NTBG040N120SC1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, D2PAK-7 Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NTBG040N120SC1 | MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 1200 V, 40 m, 60 A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7 Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, D2PAK-7 Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,BareDie Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??N??hannel,SiliconCarbide1200V,40m | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel1200V,40m,60A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondleve | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??N??hannel,SiliconCarbide1200V,40m Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinte | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel1200V,40m,60A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
D2PAK7 (TO-263-7L HV) |
100000 |
全新原裝 |
詢價(jià) | ||
onsemi |
24+ |
D2PAK-7 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
onsemi(安森美) |
23+ |
D2PAK-7 |
8357 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價(jià) | ||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢價(jià) | ||
ON |
22+ |
SOT23 |
2400 |
原廠原裝,價(jià)格優(yōu)勢(shì)!13246658303 |
詢價(jià) | ||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢價(jià) | ||
ON2 |
23+ |
原廠原封 |
800 |
訂貨1周 原裝正品 |
詢價(jià) | ||
ON/安森美 |
22+ |
24000 |
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu) |
詢價(jià) | |||
onsemi |
23+ |
D2PAK-7 |
1356 |
原廠正品現(xiàn)貨SiC MOSFET全系列 |
詢價(jià) | ||
ON |
22+ |
NA |
680 |
原裝正品支持實(shí)單 |
詢價(jià) |
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