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NTHL040N120SC1

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL040N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL040N120SC1

Marking：NTHL040N120SC1；Package：TO-247；MOSFET - SiC Power, Single N-Channel 1200 V, 40 m, 60 A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL040N120SC1_V01

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL040N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG040N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,40m,60A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG040N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,D2PAK-7

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG040N120SC1

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTC040N120SC1

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,BareDie

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTC040N120SC1

MOSFET??N??hannel,SiliconCarbide1200V,40m

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON
23+
TO-247-3LD
100000
全新原裝
 詢價(jià)
onsemi
24+
TO-247-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
onsemi(安森美)
23+
TO-247
8110
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
ON(安森美)
23+
11755
公司只做原裝正品,假一賠十
 詢價(jià)
ON
24+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價(jià)
ON
21+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價(jià)
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
onsemi
23+
TO-247-3LD
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
 詢價(jià)
ONSEMI
23+
MOSFET
5864
原裝原標(biāo)原盒 給價(jià)就出 全網(wǎng)最低
 詢價(jià)
24+
N/A
82000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
更多NTHL040N120SC1供應(yīng)商 更新時(shí)間2024-11-28 16:20:00

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