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首頁(yè) >NTHL160N120SC1>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NTHL160N120SC1 | Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boos | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NTHL160N120SC1 | Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NTHL160N120SC1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NTHL160N120SC1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boost | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NTHL160N120SC1 | MOSFET - SiC Power, Single N-Channel 1200 V, 160 m, 17 A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,160m,19.5A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–EliteSiC,160mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,BareDie Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondl | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel1200V,160m,17A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
TO-247-3LD |
100000 |
全新原裝 |
詢(xún)價(jià) | ||
onsemi |
24+ |
TO-247-3 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢(xún)價(jià) | ||
onsemi(安森美) |
23+ |
TO-247 |
7814 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢(xún)價(jià) | ||
ON(安森美) |
23+ |
TO-247 |
11402 |
公司只做原裝正品,假一賠十 |
詢(xún)價(jià) | ||
ON |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢(xún)價(jià) | ||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢(xún)價(jià) | ||
ON(安森美) |
23+ |
N/A |
589610 |
新到現(xiàn)貨 原廠一手貨源 價(jià)格秒殺代理! |
詢(xún)價(jià) | ||
ON(安森美) |
6000 |
詢(xún)價(jià) | |||||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢(xún)價(jià) | ||
ON(安森美) |
22+ |
NA |
8000 |
原廠原裝現(xiàn)貨 |
詢(xún)價(jià) |
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