首頁 >NTC160N120SC1>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
NTC160N120SC1 | Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, Bare Die Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | |
SiliconCarbide(SiC)MOSFET–EliteSiC,160mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,160m,19.5A | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boost | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–EliteSiC,160mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC? | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC? | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boos | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel1200V,160m,17A | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
24000 |
原裝正品現(xiàn)貨,實單可談,量大價優(yōu) |
詢價 | |||
AAC |
23+ |
原廠原包 |
19960 |
只做進口原裝 終端工廠免費送樣 |
詢價 | ||
VATRONICS |
22+ |
SMD |
38000 |
原裝現(xiàn)貨樣品可售 |
詢價 | ||
16 |
2 |
0.47 |
10000 |
全新原裝現(xiàn)貨 樣品可售 |
詢價 | ||
風華高科 |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
ROHS |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | ||||
N/A |
24+ |
ROHS |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
RUILON(瑞隆源) |
23+ |
插件,P=7.5mm |
925 |
專做感器/百分百原裝現(xiàn)貨 |
詢價 | ||
NTC |
23+ |
38000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
NTC |
21+ |
DIP |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 |
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相關庫存
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