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NTBG022N120M3S

MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A

Features ?Typ.RDS(on)=22m ?Lowswitchinglosses(Typ.EON485Jat40A,800V) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?UninterruptiblePowerSupplies(UPS) ?EnergyStorageSystems

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG022N120M3S

Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L

Features ?Typ.RDS(on)=22m ?Lowswitchinglosses(Typ.EON485Jat40A,800V) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?UninterruptiblePowerSupplies(UPS) ?EnergyStorageSystems

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG022N120M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 22mohm, 1200V, M3S, D2PAK-7L

Features ?Typ.RDS(on)=22m ?UltraLowGateCharge(QG(tot)=151nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=146pF) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?Uninterruptible

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG022N120M3S

SiC N-Channel MOSFET

FEATURES ·Typ.RDS(on)=960mΩ ·100AvalancheTested ·RoHSCompliant APPLICATIONS ·SolarInverters ·ElectricVehicleChargingStations ·UninterruptiblePowerSupplies(UPS) ·EnergyStorageSystems ·SwitchModePowerSupplies(SMPS)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTBG022N120M3S_V01

Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L

Features ?Typ.RDS(on)=22m ?Lowswitchinglosses(Typ.EON485Jat40A,800V) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?UninterruptiblePowerSupplies(UPS) ?EnergyStorageSystems

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG022N120M3S_V02

Silicon Carbide (SiC) MOSFET - EliteSiC, 22mohm, 1200V, M3S, D2PAK-7L

Features ?Typ.RDS(on)=22m ?UltraLowGateCharge(QG(tot)=151nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=146pF) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?Uninterruptible

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL022N120M3S

SiliconCarbide(SiC)MOSFET–22mohm,1200V,M3,TO-247-3L

Features ?Typ.RDS(on)=22m@VGS=18V ?UltraLowGateCharge(QG(tot)=139nC) ?LowEffectiveOutputCapacitance(Coss=141pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb-Free2LI(onsecondlevelinterconnection) TypicalApplic

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG022N120M3S

SiliconCarbide(SiC)MOSFET–22mohm,1200V,M3,D2PAK-7L

Features ?Typ.RDS(on)=22m@VGS=18V ?UltraLowGateCharge(QG(tot)=148nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=148pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesareRoHSCompliant TypicalApplications ?AutomotiveOnBoardC

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG022N120M3S

MOSFET-SiliconCarbide(SiC),SingleN-Channel,M3,D2PAK-7L1200V,22m,58A

Features ?Typ.RDS(on)=22m@VGS=18V ?UltraLowGateCharge(QG(tot)=148nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=148pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesareRoHSCompliant TypicalApplications ?AutomotiveOnBoardC

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON
23+
D2PAK7 (TO-263-7L HV)
100000
全新原裝
 詢價(jià)
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
onsemi
23+
D2PAK-7L
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
 詢價(jià)
ON Semiconductor
23+/22+
790
原裝進(jìn)口訂貨7-10個(gè)工作日
 詢價(jià)
24+
N/A
47000
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
ON
22+
NA
598
原裝正品支持實(shí)單
 詢價(jià)
Onsemi
22
6000
全新、原裝
 詢價(jià)
ON
21+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價(jià)
ON
22+
SOT23
2400
原廠原裝,價(jià)格優(yōu)勢(shì)!13246658303
 詢價(jià)
ON
21+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價(jià)
更多NTBG022N120M3S供應(yīng)商 更新時(shí)間2024-11-14 16:21:00

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