| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOSFET 30 V, 117 A, Single N??hannel, DPAK/IPAK PowerMOSFET 30V,117A,SingleN?Channel,DPAK/IPAK Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?AECQ101Qualified?NVD4804N ?TheseDevicesarePb?FreeandareRoHSCompliant App | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
30V N-Channel MOSFET ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?TheseDevicesarePb?FreeandareRoHSCompliant ?CPUPowerDelivery ?DC?DCConverters ?LowSideSwitching Description VDS(V)=30V I | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司 | UMW | ||
30V N-Channel MOSFET Description ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?TheseDevicesarePb?FreeandareRoHSCompliant ?CPUPowerDelivery ?DC?DCConverters ?LowSideSwitching Features VDS(V | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體 | EVVOSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=124A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK MOSFET–Power,Single,N-Channel,DPAK/IPAK30V,117A Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?AECQ101Qualified?NVD4804N ?TheseDevicesarePb?FreeandareRoHSCompliant A | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=124A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK MOSFET–Power,Single,N-Channel,DPAK/IPAK30V,117A Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?AECQ101Qualified?NVD4804N ?TheseDevicesarePb?FreeandareRoHSCompliant A | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK MOSFET–Power,Single,N-Channel,DPAK/IPAK30V,117A Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?AECQ101Qualified?NVD4804N ?TheseDevicesarePb?FreeandareRoHSCompliant A | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
30V N-Channel MOSFET ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?TheseDevicesarePb?FreeandareRoHSCompliant ?CPUPowerDelivery ?DC?DCConverters ?LowSideSwitching Description VDS(V)=30V I | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司 | UMW | ||
N-channel Enhancement Mode Power MOSFET Features ?VDS=30V,ID=150A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
30V N-Channel MOSFET Description ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?TheseDevicesarePb?FreeandareRoHSCompliant ?CPUPowerDelivery ?DC?DCConverters ?LowSideSwitching Features VDS(V | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體 | EVVOSEMI | ||
Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK MOSFET–Power,Single,N-Channel,DPAK/IPAK30V,117A Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?AECQ101Qualified?NVD4804N ?TheseDevicesarePb?FreeandareRoHSCompliant A | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
Power MOSFET 30 V, 117 A, Single N??hannel, DPAK/IPAK PowerMOSFET 30V,117A,SingleN?Channel,DPAK/IPAK Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?AECQ101Qualified?NVD4804N ?TheseDevicesarePb?FreeandareRoHSCompliant App | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
Power MOSFET | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
Power MOSFET | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
N-Channel 30-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
Power MOSFET | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
N-Channel 30-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
Power MOSFET | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
N-Channel 30-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI |
詳細參數(shù)
- 型號：
NTD4804
- 功能描述：
MOSFET NFET 30V 117A 4MOHM
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
TO-252 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
ON |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
ON |
1822+ |
TO-252 |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
ON/安森美 |
20+ |
TO-252 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
ON/安森美 |
23+ |
TO-252 |
10000 |
公司只做原裝正品 |
詢價 | ||
ON/安森美 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ON/安森美 |
21+ |
TO-252 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ON/安森美 |
2022 |
TO-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
ON/安森美 |
2022+ |
TO-252 |
5000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
ON/安森美 |
23+ |
TO-252 |
6000 |
原裝正品，支持實單 |
詢價 |
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