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NX5330SA

1310nmInGaAsPMQW-FPLASERDIODEFOROTDRAPPLICATIONS

CEL

California Eastern Labs

NX5330SA-AZ

1310nmInGaAsPMQW-FPLASERDIODEFOROTDRAPPLICATIONS

CEL

California Eastern Labs

PBSS5330PA

30V,3APNPlowVCEsattransistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapability. NPNcomplement:PBSS4330PA. Featuresandbenefits ?Lowcollector-emittersaturatio

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS5330PA

30V,3APNPlowVCEsat(BISS)transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinan ultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewith mediumpowercapability. NPNcomplement:PBSS4330PA. 2.Featuresandbenefits ?Lowcollector-emitter

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS5330PAS

30V,3APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsoldarablesidepads. NPNcomplement:PBSS4330PAS Featu

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS5330X

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5330X

30V,3APNPlowVCEsat(BISS)transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT89plasticpackage. FEATURES ?SOT89(SC-62)package ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapability:ICandICM ?Higherefficiencyleadingtolessheatgeneration ?Reducedprinted-circuitboardrequiremen

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5330X

30V,3APNPlowVCEsat(BISS)transistor

FEATURES ?SOT89(SC-62)package ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapability:ICandICM ?Higherefficiencyleadingtolessheatgeneration ?Reducedprinted-circuitboardrequirements. APPLICATIONS ?Powermanagement –DC/DCconverters –Supplylines

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PH5330

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effectpowertransistorinaSOT669(LFPAK)package. Productavailability: PH5330inSOT669(LFPAK). Features ■Logiclevelcompatible ■Lowdrivecurrent ■High-densitymounting ■Verylowon-stateresistance. Applications ■DC-to-DCconve

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PH5330E

N-channelTrenchMOSlogiclevelFET

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Higheroperat

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    NTE5330

  • 制造商：

    NTE Electronics

  • 功能描述：

    BRIDGE RECTIFIER - FULL WAVE SINGLE PHASE 600V 6A

  • 功能描述：

    BRIDGE RECTIFIER 1PH 6A 600

  • 功能描述：

    BRIDGE RECTIFIER, 1PH, 6A, 600V, SIP-4

  • 功能描述：

    R-SI-BRIDGE 600V-6A

  • 功能描述：

    BRIDGE RECTIFIER, 1PH, 6A, 600V, SIP-4; No. of

  • Phases：

    Single; Repetitive Reverse Voltage Vrrm

  • Max：

    600V; Forward Current

  • If(AV)：

    6A; Forward Voltage VF

  • Max：

    1V; Bridge Rectifier Case

  • Style：

    SIP; No. of

  • Pins：

    4 ;RoHS

  • Compliant：

    Yes

  • 功能描述：

    Diode Rectifier Bridge Single 600V 6A 4-Pin

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
N/A
75000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
新
305
全新原裝 貨期兩周
 詢價
2022+
301
全新原裝 貨期兩周
 詢價
N/A
6000
面議
19
MODULE
 詢價
原廠
2023+
模塊
600
專營模塊,繼電器,公司原裝現(xiàn)貨
 詢價
NTE
23+
39402
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
CRYDOM
23+
模塊
5000
原裝正品,假一罰十
 詢價
CRYDOM
23+
原廠原裝
1002
全新原裝現(xiàn)貨
 詢價
CRYDOM
18+
MODULE
2
就找我吧!--邀您體驗愉快問購元件!
 詢價
NTE
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
 詢價
更多NTE5330供應(yīng)商 更新時間2025-2-25 11:06:00

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