NV24M01MUW3VTBG集成電路（IC）的存儲器規(guī)格書PDF中文資料

NV24M01MUW3VTBG屬于集成電路（IC）的存儲器。由安森美半導(dǎo)體公司制造生產(chǎn)的NV24M01MUW3VTBG存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The NV24M01MUW is a EEPROM Serial 1?Mb I2C ? Automotive

Grade 1, internally organized as 131,072 words of 8 bits each.

It features a 256?byte page write buffer and supports the Standard

(100 kHz), Fast (400 kHz) and Fast?Plus (1 MHz) I2C protocol.

Write operations can be inhibited by taking the WP pin High (this

protects the entire memory).

External address pins make it possible to address up to four

NV24M01MUW devices on the same bus.

On?Chip ECC (Error Correction Code) makes the device suitable

for high reliability applications.

Features

? Automotive AEC?Q100 Grade 1 (?40°C to +125°C) Qualified

? 1.8 V to 5.5 V Supply Voltage Range

? 256?Byte Page Write Buffer

? Hardware Write Protection for Entire Memory

? Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs

(SCL and SDA)

? Low Power CMOS Technology

? 1,000,000 Program/Erase Cycles

? 100 Year Data Retention

? Industrial and Extended Temperature Range

? 8?pad UDFN Wettable Flank Package

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

Compliant